Single-electron device with si nanodot array and multiple input gates

Takuya Kaizawa; Masashi Arita; Akira Fujiwara; Kenji Yamazaki; Yukinori Ono; Hiroshi Inokawa; Yasuo Takahashi; Jung Bum Choi

doi:10.1109/TNANO.2009.2016338

Single-electron device with si nanodot array and multiple input gates

Takuya Kaizawa, Masashi Arita, Akira Fujiwara, Kenji Yamazaki, Yukinori Ono, Hiroshi Inokawa, Yasuo Takahashi, Jung Bum Choi

Faculty of Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We have developed a flexible-logic-gate single-electron device (SED) with an array of nanodots. Although the small size of SEDs is highly advantageous, the size of the nanodots inevitably fluctuates, which causes variations in device characteristics. This variability can be eliminated and high device functionality can be obtained by exploiting the oscillatory characteristics and multigate capability of SEDs. We fabricated, on a silicon-on-insulator wafer, a Si nanodot array device with two input gates and a control gate and investigated its basic operation characteristics experimentally. The device was demonstrated to operate as a logic gate providing six important logic functions ( and, or, nand, nor, xor, and xnor), which are obtained by adjusting the control-gate voltage.

Original language	English
Article number	4799194
Pages (from-to)	535-541
Number of pages	7
Journal	IEEE Transactions on Nanotechnology
Volume	8
Issue number	4
DOIs	https://doi.org/10.1109/TNANO.2009.2016338
Publication status	Published - Jul 2009

Keywords

Coulomb blockade
Dot array
Logic devices
Logic functions
Quantum dots
Silicon
Silicon on insulator technology
Single electron

ASJC Scopus subject areas

Computer Science Applications
Electrical and Electronic Engineering

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title = "Single-electron device with si nanodot array and multiple input gates",

abstract = "We have developed a flexible-logic-gate single-electron device (SED) with an array of nanodots. Although the small size of SEDs is highly advantageous, the size of the nanodots inevitably fluctuates, which causes variations in device characteristics. This variability can be eliminated and high device functionality can be obtained by exploiting the oscillatory characteristics and multigate capability of SEDs. We fabricated, on a silicon-on-insulator wafer, a Si nanodot array device with two input gates and a control gate and investigated its basic operation characteristics experimentally. The device was demonstrated to operate as a logic gate providing six important logic functions ( and, or, nand, nor, xor, and xnor), which are obtained by adjusting the control-gate voltage.",

keywords = "Coulomb blockade, Dot array, Logic devices, Logic functions, Quantum dots, Silicon, Silicon on insulator technology, Single electron",

author = "Takuya Kaizawa and Masashi Arita and Akira Fujiwara and Kenji Yamazaki and Yukinori Ono and Hiroshi Inokawa and Yasuo Takahashi and Choi, {Jung Bum}",

note = "Funding Information: Manuscript received June 26, 2007. First published March 10, 2009; current version published July 9, 2009. This work was supported in part by a Grant-in-Aid from the Japan Society for the Promotion of Science (JSPS) KAKENHI under Grant 16206038, Grant 17201029, Grant 18560640, Grant 19026001, Grant 20035001, MOST through the Frontier 21 National Program for Tera-level Nano-Devices (TND) of Korea. The review of this paper was arranged by Associate Editor K. Matsumoto.",

year = "2009",

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doi = "10.1109/TNANO.2009.2016338",

language = "English",

volume = "8",

pages = "535--541",

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AU - Kaizawa, Takuya

AU - Arita, Masashi

AU - Fujiwara, Akira

AU - Yamazaki, Kenji

AU - Ono, Yukinori

AU - Inokawa, Hiroshi

AU - Takahashi, Yasuo

AU - Choi, Jung Bum

N1 - Funding Information: Manuscript received June 26, 2007. First published March 10, 2009; current version published July 9, 2009. This work was supported in part by a Grant-in-Aid from the Japan Society for the Promotion of Science (JSPS) KAKENHI under Grant 16206038, Grant 17201029, Grant 18560640, Grant 19026001, Grant 20035001, MOST through the Frontier 21 National Program for Tera-level Nano-Devices (TND) of Korea. The review of this paper was arranged by Associate Editor K. Matsumoto.

PY - 2009/7

Y1 - 2009/7

N2 - We have developed a flexible-logic-gate single-electron device (SED) with an array of nanodots. Although the small size of SEDs is highly advantageous, the size of the nanodots inevitably fluctuates, which causes variations in device characteristics. This variability can be eliminated and high device functionality can be obtained by exploiting the oscillatory characteristics and multigate capability of SEDs. We fabricated, on a silicon-on-insulator wafer, a Si nanodot array device with two input gates and a control gate and investigated its basic operation characteristics experimentally. The device was demonstrated to operate as a logic gate providing six important logic functions ( and, or, nand, nor, xor, and xnor), which are obtained by adjusting the control-gate voltage.

AB - We have developed a flexible-logic-gate single-electron device (SED) with an array of nanodots. Although the small size of SEDs is highly advantageous, the size of the nanodots inevitably fluctuates, which causes variations in device characteristics. This variability can be eliminated and high device functionality can be obtained by exploiting the oscillatory characteristics and multigate capability of SEDs. We fabricated, on a silicon-on-insulator wafer, a Si nanodot array device with two input gates and a control gate and investigated its basic operation characteristics experimentally. The device was demonstrated to operate as a logic gate providing six important logic functions ( and, or, nand, nor, xor, and xnor), which are obtained by adjusting the control-gate voltage.

KW - Coulomb blockade

KW - Dot array

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KW - Logic functions

KW - Quantum dots

KW - Silicon

KW - Silicon on insulator technology

KW - Single electron

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Single-electron device with si nanodot array and multiple input gates

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Keywords

ASJC Scopus subject areas

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