Single-electron device with si nanodot array and multiple input gates

Takuya Kaizawa, Masashi Arita, Akira Fujiwara, Kenji Yamazaki, Yukinori Ono, Hiroshi Inokawa, Yasuo Takahashi, Jung Bum Choi

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We have developed a flexible-logic-gate single-electron device (SED) with an array of nanodots. Although the small size of SEDs is highly advantageous, the size of the nanodots inevitably fluctuates, which causes variations in device characteristics. This variability can be eliminated and high device functionality can be obtained by exploiting the oscillatory characteristics and multigate capability of SEDs. We fabricated, on a silicon-on-insulator wafer, a Si nanodot array device with two input gates and a control gate and investigated its basic operation characteristics experimentally. The device was demonstrated to operate as a logic gate providing six important logic functions ( and, or, nand, nor, xor, and xnor), which are obtained by adjusting the control-gate voltage.

Original languageEnglish
Article number4799194
Pages (from-to)535-541
Number of pages7
JournalIEEE Transactions on Nanotechnology
Volume8
Issue number4
DOIs
Publication statusPublished - Jul 1 2009

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Keywords

  • Coulomb blockade
  • Dot array
  • Logic devices
  • Logic functions
  • Quantum dots
  • Silicon
  • Silicon on insulator technology
  • Single electron

ASJC Scopus subject areas

  • Computer Science Applications
  • Electrical and Electronic Engineering

Cite this

Kaizawa, T., Arita, M., Fujiwara, A., Yamazaki, K., Ono, Y., Inokawa, H., Takahashi, Y., & Choi, J. B. (2009). Single-electron device with si nanodot array and multiple input gates. IEEE Transactions on Nanotechnology, 8(4), 535-541. [4799194]. https://doi.org/10.1109/TNANO.2009.2016338