Single-electron device with si nanodot array and multiple input gates

Takuya Kaizawa, Masashi Arita, Akira Fujiwara, Kenji Yamazaki, Yukinori Ono, Hiroshi Inokawa, Yasuo Takahashi, Jung Bum Choi

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We have developed a flexible-logic-gate single-electron device (SED) with an array of nanodots. Although the small size of SEDs is highly advantageous, the size of the nanodots inevitably fluctuates, which causes variations in device characteristics. This variability can be eliminated and high device functionality can be obtained by exploiting the oscillatory characteristics and multigate capability of SEDs. We fabricated, on a silicon-on-insulator wafer, a Si nanodot array device with two input gates and a control gate and investigated its basic operation characteristics experimentally. The device was demonstrated to operate as a logic gate providing six important logic functions ( and, or, nand, nor, xor, and xnor), which are obtained by adjusting the control-gate voltage.

Original languageEnglish
Article number4799194
Pages (from-to)535-541
Number of pages7
JournalIEEE Transactions on Nanotechnology
Volume8
Issue number4
DOIs
Publication statusPublished - Jul 2009
Externally publishedYes

Fingerprint

Electron devices
Logic gates
Silicon
Electric potential

Keywords

  • Coulomb blockade
  • Dot array
  • Logic devices
  • Logic functions
  • Quantum dots
  • Silicon
  • Silicon on insulator technology
  • Single electron

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications

Cite this

Kaizawa, T., Arita, M., Fujiwara, A., Yamazaki, K., Ono, Y., Inokawa, H., ... Choi, J. B. (2009). Single-electron device with si nanodot array and multiple input gates. IEEE Transactions on Nanotechnology, 8(4), 535-541. [4799194]. https://doi.org/10.1109/TNANO.2009.2016338

Single-electron device with si nanodot array and multiple input gates. / Kaizawa, Takuya; Arita, Masashi; Fujiwara, Akira; Yamazaki, Kenji; Ono, Yukinori; Inokawa, Hiroshi; Takahashi, Yasuo; Choi, Jung Bum.

In: IEEE Transactions on Nanotechnology, Vol. 8, No. 4, 4799194, 07.2009, p. 535-541.

Research output: Contribution to journalArticle

Kaizawa, T, Arita, M, Fujiwara, A, Yamazaki, K, Ono, Y, Inokawa, H, Takahashi, Y & Choi, JB 2009, 'Single-electron device with si nanodot array and multiple input gates', IEEE Transactions on Nanotechnology, vol. 8, no. 4, 4799194, pp. 535-541. https://doi.org/10.1109/TNANO.2009.2016338
Kaizawa T, Arita M, Fujiwara A, Yamazaki K, Ono Y, Inokawa H et al. Single-electron device with si nanodot array and multiple input gates. IEEE Transactions on Nanotechnology. 2009 Jul;8(4):535-541. 4799194. https://doi.org/10.1109/TNANO.2009.2016338
Kaizawa, Takuya ; Arita, Masashi ; Fujiwara, Akira ; Yamazaki, Kenji ; Ono, Yukinori ; Inokawa, Hiroshi ; Takahashi, Yasuo ; Choi, Jung Bum. / Single-electron device with si nanodot array and multiple input gates. In: IEEE Transactions on Nanotechnology. 2009 ; Vol. 8, No. 4. pp. 535-541.
@article{8722c8a4f25045c7a7aa1a59d14c916a,
title = "Single-electron device with si nanodot array and multiple input gates",
abstract = "We have developed a flexible-logic-gate single-electron device (SED) with an array of nanodots. Although the small size of SEDs is highly advantageous, the size of the nanodots inevitably fluctuates, which causes variations in device characteristics. This variability can be eliminated and high device functionality can be obtained by exploiting the oscillatory characteristics and multigate capability of SEDs. We fabricated, on a silicon-on-insulator wafer, a Si nanodot array device with two input gates and a control gate and investigated its basic operation characteristics experimentally. The device was demonstrated to operate as a logic gate providing six important logic functions ( and, or, nand, nor, xor, and xnor), which are obtained by adjusting the control-gate voltage.",
keywords = "Coulomb blockade, Dot array, Logic devices, Logic functions, Quantum dots, Silicon, Silicon on insulator technology, Single electron",
author = "Takuya Kaizawa and Masashi Arita and Akira Fujiwara and Kenji Yamazaki and Yukinori Ono and Hiroshi Inokawa and Yasuo Takahashi and Choi, {Jung Bum}",
year = "2009",
month = "7",
doi = "10.1109/TNANO.2009.2016338",
language = "English",
volume = "8",
pages = "535--541",
journal = "IEEE Transactions on Nanotechnology",
issn = "1536-125X",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "4",

}

TY - JOUR

T1 - Single-electron device with si nanodot array and multiple input gates

AU - Kaizawa, Takuya

AU - Arita, Masashi

AU - Fujiwara, Akira

AU - Yamazaki, Kenji

AU - Ono, Yukinori

AU - Inokawa, Hiroshi

AU - Takahashi, Yasuo

AU - Choi, Jung Bum

PY - 2009/7

Y1 - 2009/7

N2 - We have developed a flexible-logic-gate single-electron device (SED) with an array of nanodots. Although the small size of SEDs is highly advantageous, the size of the nanodots inevitably fluctuates, which causes variations in device characteristics. This variability can be eliminated and high device functionality can be obtained by exploiting the oscillatory characteristics and multigate capability of SEDs. We fabricated, on a silicon-on-insulator wafer, a Si nanodot array device with two input gates and a control gate and investigated its basic operation characteristics experimentally. The device was demonstrated to operate as a logic gate providing six important logic functions ( and, or, nand, nor, xor, and xnor), which are obtained by adjusting the control-gate voltage.

AB - We have developed a flexible-logic-gate single-electron device (SED) with an array of nanodots. Although the small size of SEDs is highly advantageous, the size of the nanodots inevitably fluctuates, which causes variations in device characteristics. This variability can be eliminated and high device functionality can be obtained by exploiting the oscillatory characteristics and multigate capability of SEDs. We fabricated, on a silicon-on-insulator wafer, a Si nanodot array device with two input gates and a control gate and investigated its basic operation characteristics experimentally. The device was demonstrated to operate as a logic gate providing six important logic functions ( and, or, nand, nor, xor, and xnor), which are obtained by adjusting the control-gate voltage.

KW - Coulomb blockade

KW - Dot array

KW - Logic devices

KW - Logic functions

KW - Quantum dots

KW - Silicon

KW - Silicon on insulator technology

KW - Single electron

UR - http://www.scopus.com/inward/record.url?scp=67949124582&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67949124582&partnerID=8YFLogxK

U2 - 10.1109/TNANO.2009.2016338

DO - 10.1109/TNANO.2009.2016338

M3 - Article

AN - SCOPUS:67949124582

VL - 8

SP - 535

EP - 541

JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

SN - 1536-125X

IS - 4

M1 - 4799194

ER -