Single-electron device using Si nanodot array and multi-input gates

Takuya Kaizawa, Masashi Arita, Akira Fujiwara, Kenji Yamazaki, Yukinori Ono, Hiroshi Inokawa, Yasuo Takahashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We fabricated a single-electron device (SED) that has many nanodots. Oscillatory characteristics and multi-gate capabilities of SEDs were used to eliminate size fluctuation and achieve a high functionality. We fabricated a Si nanodot array device, which has two input gates and a control gate, and tested its basic operation characteristics experimentally. The device operates as a logic gate with selectable functions when the control gate voltage is changed. We demonstrated that the device exhibits five of six important logic functions.

Original languageEnglish
Title of host publicationICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages1062-1064
Number of pages3
DOIs
Publication statusPublished - 2007
Externally publishedYes
EventICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: Oct 23 2006Oct 26 2006

Other

OtherICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
CountryChina
CityShanghai
Period10/23/0610/26/06

Fingerprint

Electron devices
Logic gates
Electric potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Kaizawa, T., Arita, M., Fujiwara, A., Yamazaki, K., Ono, Y., Inokawa, H., & Takahashi, Y. (2007). Single-electron device using Si nanodot array and multi-input gates. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 1062-1064). [4098322] https://doi.org/10.1109/ICSICT.2006.306681

Single-electron device using Si nanodot array and multi-input gates. / Kaizawa, Takuya; Arita, Masashi; Fujiwara, Akira; Yamazaki, Kenji; Ono, Yukinori; Inokawa, Hiroshi; Takahashi, Yasuo.

ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2007. p. 1062-1064 4098322.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kaizawa, T, Arita, M, Fujiwara, A, Yamazaki, K, Ono, Y, Inokawa, H & Takahashi, Y 2007, Single-electron device using Si nanodot array and multi-input gates. in ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 4098322, pp. 1062-1064, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, 10/23/06. https://doi.org/10.1109/ICSICT.2006.306681
Kaizawa T, Arita M, Fujiwara A, Yamazaki K, Ono Y, Inokawa H et al. Single-electron device using Si nanodot array and multi-input gates. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2007. p. 1062-1064. 4098322 https://doi.org/10.1109/ICSICT.2006.306681
Kaizawa, Takuya ; Arita, Masashi ; Fujiwara, Akira ; Yamazaki, Kenji ; Ono, Yukinori ; Inokawa, Hiroshi ; Takahashi, Yasuo. / Single-electron device using Si nanodot array and multi-input gates. ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2007. pp. 1062-1064
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