Single-electron and quantum SOI devices

Yukinori Ono, Kenji Yamazaki, Masao Nagase, Seiji Horiguchi, Kenji Shiraishi, Yasuo Takahashi

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

This paper describes, from the viewpoint of device fabrication, single-electron and quantum devices using silicon-on-insulators (SOIs). We point out that control of the oxidation of Si is quite important and could be the key to their fabrication. We also introduce our technique for making single-electron transistors (SETs), which uses special phenomena that occur during the oxidation of SOIs, and show that the technique enables us to realize primary single-electron circuits as a result of its high controllability and high reproducibility.

Original languageEnglish
Pages (from-to)435-442
Number of pages8
JournalMicroelectronic Engineering
Volume59
Issue number1-4
DOIs
Publication statusPublished - Nov 2001
Externally publishedYes

Fingerprint

Silicon
insulators
Single electron transistors
Fabrication
Oxidation
oxidation
single electron transistors
fabrication
Electrons
controllability
silicon
Controllability
electrons
Networks (circuits)

Keywords

  • Oxidation
  • Quantum device
  • Silicon-on-insulator
  • Single-electron transistor

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics

Cite this

Ono, Y., Yamazaki, K., Nagase, M., Horiguchi, S., Shiraishi, K., & Takahashi, Y. (2001). Single-electron and quantum SOI devices. Microelectronic Engineering, 59(1-4), 435-442. https://doi.org/10.1016/S0167-9317(01)00638-4

Single-electron and quantum SOI devices. / Ono, Yukinori; Yamazaki, Kenji; Nagase, Masao; Horiguchi, Seiji; Shiraishi, Kenji; Takahashi, Yasuo.

In: Microelectronic Engineering, Vol. 59, No. 1-4, 11.2001, p. 435-442.

Research output: Contribution to journalArticle

Ono, Y, Yamazaki, K, Nagase, M, Horiguchi, S, Shiraishi, K & Takahashi, Y 2001, 'Single-electron and quantum SOI devices', Microelectronic Engineering, vol. 59, no. 1-4, pp. 435-442. https://doi.org/10.1016/S0167-9317(01)00638-4
Ono Y, Yamazaki K, Nagase M, Horiguchi S, Shiraishi K, Takahashi Y. Single-electron and quantum SOI devices. Microelectronic Engineering. 2001 Nov;59(1-4):435-442. https://doi.org/10.1016/S0167-9317(01)00638-4
Ono, Yukinori ; Yamazaki, Kenji ; Nagase, Masao ; Horiguchi, Seiji ; Shiraishi, Kenji ; Takahashi, Yasuo. / Single-electron and quantum SOI devices. In: Microelectronic Engineering. 2001 ; Vol. 59, No. 1-4. pp. 435-442.
@article{a6a1040c24ec415bb1341f7b6168aba9,
title = "Single-electron and quantum SOI devices",
abstract = "This paper describes, from the viewpoint of device fabrication, single-electron and quantum devices using silicon-on-insulators (SOIs). We point out that control of the oxidation of Si is quite important and could be the key to their fabrication. We also introduce our technique for making single-electron transistors (SETs), which uses special phenomena that occur during the oxidation of SOIs, and show that the technique enables us to realize primary single-electron circuits as a result of its high controllability and high reproducibility.",
keywords = "Oxidation, Quantum device, Silicon-on-insulator, Single-electron transistor",
author = "Yukinori Ono and Kenji Yamazaki and Masao Nagase and Seiji Horiguchi and Kenji Shiraishi and Yasuo Takahashi",
year = "2001",
month = "11",
doi = "10.1016/S0167-9317(01)00638-4",
language = "English",
volume = "59",
pages = "435--442",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - Single-electron and quantum SOI devices

AU - Ono, Yukinori

AU - Yamazaki, Kenji

AU - Nagase, Masao

AU - Horiguchi, Seiji

AU - Shiraishi, Kenji

AU - Takahashi, Yasuo

PY - 2001/11

Y1 - 2001/11

N2 - This paper describes, from the viewpoint of device fabrication, single-electron and quantum devices using silicon-on-insulators (SOIs). We point out that control of the oxidation of Si is quite important and could be the key to their fabrication. We also introduce our technique for making single-electron transistors (SETs), which uses special phenomena that occur during the oxidation of SOIs, and show that the technique enables us to realize primary single-electron circuits as a result of its high controllability and high reproducibility.

AB - This paper describes, from the viewpoint of device fabrication, single-electron and quantum devices using silicon-on-insulators (SOIs). We point out that control of the oxidation of Si is quite important and could be the key to their fabrication. We also introduce our technique for making single-electron transistors (SETs), which uses special phenomena that occur during the oxidation of SOIs, and show that the technique enables us to realize primary single-electron circuits as a result of its high controllability and high reproducibility.

KW - Oxidation

KW - Quantum device

KW - Silicon-on-insulator

KW - Single-electron transistor

UR - http://www.scopus.com/inward/record.url?scp=0035498724&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035498724&partnerID=8YFLogxK

U2 - 10.1016/S0167-9317(01)00638-4

DO - 10.1016/S0167-9317(01)00638-4

M3 - Article

AN - SCOPUS:0035498724

VL - 59

SP - 435

EP - 442

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

IS - 1-4

ER -