Single crystal X-ray study of pressure-induced metal-insulator transition in (DMeDCNQI)2Cu

Y. Nogami; T. Date; K. Oshima; O. Arimoto

doi:10.1016/s0379-6779(97)81033-8

Single crystal X-ray study of pressure-induced metal-insulator transition in (DMeDCNQI)₂Cu

Y. Nogami, T. Date, K. Oshima, O. Arimoto

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The structures of the metallic and the insulating phases of (DMeDCNQI)₂Cu were solved under pressures of up to 15.8 kbar at room temperature. An angle α representing the deformation of CuN₄ tetrahedron around the Cu atom increases almost linearly with pressure at the rate of about 0.6 deg./ kbar. Furthermore, an X-ray diffuse scattering study revealed the presence of a 3 c CDW superlattice structure above 12 kbar in the high pressure insulating phase.

Original language	English
Pages (from-to)	2073-2074
Number of pages	2
Journal	Synthetic Metals
Volume	86
Issue number	1-3
DOIs	https://doi.org/10.1016/s0379-6779(97)81033-8
Publication status	Published - Feb 28 1997

Keywords

Diffraction and scattering
Organic semiconductors based on conjugated molecules
Structural phase transition
X-ray emission

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/s0379-6779(97)81033-8

Cite this

@article{806c9e773ed64ed8a417b771d6e99f47,

title = "Single crystal X-ray study of pressure-induced metal-insulator transition in (DMeDCNQI)2Cu",

abstract = "The structures of the metallic and the insulating phases of (DMeDCNQI)2Cu were solved under pressures of up to 15.8 kbar at room temperature. An angle α representing the deformation of CuN4 tetrahedron around the Cu atom increases almost linearly with pressure at the rate of about 0.6 deg./ kbar. Furthermore, an X-ray diffuse scattering study revealed the presence of a 3 c CDW superlattice structure above 12 kbar in the high pressure insulating phase.",

keywords = "Diffraction and scattering, Organic semiconductors based on conjugated molecules, Structural phase transition, X-ray emission",

author = "Y. Nogami and T. Date and K. Oshima and O. Arimoto",

note = "Funding Information: We express thanks the committee of X-ray Laboratory of Okayama University for the use of the Rigaku AFCSR and the HUBER 5042 diffractometers. The present study was supported by a Grant-in Aid for Scientific Research of the Ministry of Education, Science and Culture.",

year = "1997",

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doi = "10.1016/s0379-6779(97)81033-8",

language = "English",

volume = "86",

pages = "2073--2074",

journal = "Synthetic Metals",

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TY - JOUR

T1 - Single crystal X-ray study of pressure-induced metal-insulator transition in (DMeDCNQI)2Cu

AU - Nogami, Y.

AU - Date, T.

AU - Oshima, K.

AU - Arimoto, O.

N1 - Funding Information: We express thanks the committee of X-ray Laboratory of Okayama University for the use of the Rigaku AFCSR and the HUBER 5042 diffractometers. The present study was supported by a Grant-in Aid for Scientific Research of the Ministry of Education, Science and Culture.

PY - 1997/2/28

Y1 - 1997/2/28

N2 - The structures of the metallic and the insulating phases of (DMeDCNQI)2Cu were solved under pressures of up to 15.8 kbar at room temperature. An angle α representing the deformation of CuN4 tetrahedron around the Cu atom increases almost linearly with pressure at the rate of about 0.6 deg./ kbar. Furthermore, an X-ray diffuse scattering study revealed the presence of a 3 c CDW superlattice structure above 12 kbar in the high pressure insulating phase.

AB - The structures of the metallic and the insulating phases of (DMeDCNQI)2Cu were solved under pressures of up to 15.8 kbar at room temperature. An angle α representing the deformation of CuN4 tetrahedron around the Cu atom increases almost linearly with pressure at the rate of about 0.6 deg./ kbar. Furthermore, an X-ray diffuse scattering study revealed the presence of a 3 c CDW superlattice structure above 12 kbar in the high pressure insulating phase.

KW - Diffraction and scattering

KW - Organic semiconductors based on conjugated molecules

KW - Structural phase transition

KW - X-ray emission

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DO - 10.1016/s0379-6779(97)81033-8

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JO - Synthetic Metals

JF - Synthetic Metals

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