Single Crystal Growth and Magnetic Properties of CeRh2Si2

Rikio Settai, Akira Misawa, Shingo Araki, Masato Kosaki, Kiyohiro Sugiyama, Yoshichika Ōnuki, Tetsuya Takeuchi, Koichi Kindo, Kiyohiro Sugiyama, Yoshinori Haga, Etsuji Yamamoto, Yoshichika Ōnuki

Research output: Contribution to journalArticle

51 Citations (Scopus)

Abstract

We have grown single crystals of CeRh2Si2 and LaRh2Si2 by the Czochralski pulling method in a tetra-arc furnace. The electrical resistivity and magnetic susceptibility are highly anisotropic, reflecting the tetragonal crystal structure. A metamagnetic transition is found for the magnetic field along the [001] direction at 26 T.

Original languageEnglish
Pages (from-to)2260-2263
Number of pages4
Journaljournal of the physical society of japan
Volume66
Issue number8
DOIs
Publication statusPublished - Jan 1 1997
Externally publishedYes

Keywords

  • CeRhSi
  • electrical resistivity
  • magnetization
  • metamagnetic transition
  • single crystal
  • susceptibility

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Settai, R., Misawa, A., Araki, S., Kosaki, M., Sugiyama, K., Ōnuki, Y., Takeuchi, T., Kindo, K., Sugiyama, K., Haga, Y., Yamamoto, E., & Ōnuki, Y. (1997). Single Crystal Growth and Magnetic Properties of CeRh2Si2. journal of the physical society of japan, 66(8), 2260-2263. https://doi.org/10.1143/JPSJ.66.2260