Single crystal growth and electrical properties of lanthanum- and gadolinium-doped BaTiO3

Naobumi Motohira, Hideaki Okamoto, Yoshinobu Nakamura, Akira Kishimoto, Masaru Miyayama, Hiroaki Yanagida

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Single crystals of (Ba0.96-xLnxSr0.04)TiO3 (Ln=La, Gd) were grown over a composition range of x=0.001 to 0.03. Electrical resistivities of the single crystals were measured by the DC four-probe method. The temperature dependence of resistivities of these crystals changed from semiconductive to metallic at the Curie temperature (TC). Although the room temperature resistivities of Gd-doped single crystals were independent of Gd concentration of 1 to 3 %, they decreased monotonically with increasing the dopant concentration after annealing in a reducing atmosphere.

Original languageEnglish
Pages (from-to)273-276
Number of pages4
JournalJournal of the Ceramic Society of Japan
Volume104
Issue number4
DOIs
Publication statusPublished - 1996
Externally publishedYes

Keywords

  • BaTiO
  • Floating zone method
  • Low resistance
  • Reducing treatment
  • Single crystal

ASJC Scopus subject areas

  • Ceramics and Composites
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Single crystal growth and electrical properties of lanthanum- and gadolinium-doped BaTiO<sub>3</sub>'. Together they form a unique fingerprint.

  • Cite this