Single crystal growth and electrical properties of lanthanum- and gadolinium-doped BaTiO3

Naobumi Motohira; Hideaki Okamoto; Yoshinobu Nakamura; Akira Kishimoto; Masaru Miyayama; Hiroaki Yanagida

doi:10.2109/jcersj.104.273

Single crystal growth and electrical properties of lanthanum- and gadolinium-doped BaTiO₃

Naobumi Motohira, Hideaki Okamoto, Yoshinobu Nakamura, Akira Kishimoto, Masaru Miyayama, Hiroaki Yanagida

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Single crystals of (Ba_0.96-xLn_xSr_0.04)TiO₃ (Ln=La, Gd) were grown over a composition range of x=0.001 to 0.03. Electrical resistivities of the single crystals were measured by the DC four-probe method. The temperature dependence of resistivities of these crystals changed from semiconductive to metallic at the Curie temperature (T_C). Although the room temperature resistivities of Gd-doped single crystals were independent of Gd concentration of 1 to 3 %, they decreased monotonically with increasing the dopant concentration after annealing in a reducing atmosphere.

Original language	English
Pages (from-to)	273-276
Number of pages	4
Journal	Journal of the Ceramic Society of Japan
Volume	104
Issue number	4
DOIs	https://doi.org/10.2109/jcersj.104.273
Publication status	Published - 1996
Externally published	Yes

Keywords

BaTiO
Floating zone method
Low resistance
Reducing treatment
Single crystal

ASJC Scopus subject areas

Ceramics and Composites
Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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title = "Single crystal growth and electrical properties of lanthanum- and gadolinium-doped BaTiO3",

abstract = "Single crystals of (Ba0.96-xLnxSr0.04)TiO3 (Ln=La, Gd) were grown over a composition range of x=0.001 to 0.03. Electrical resistivities of the single crystals were measured by the DC four-probe method. The temperature dependence of resistivities of these crystals changed from semiconductive to metallic at the Curie temperature (TC). Although the room temperature resistivities of Gd-doped single crystals were independent of Gd concentration of 1 to 3 %, they decreased monotonically with increasing the dopant concentration after annealing in a reducing atmosphere.",

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year = "1996",

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T1 - Single crystal growth and electrical properties of lanthanum- and gadolinium-doped BaTiO3

AU - Motohira, Naobumi

AU - Okamoto, Hideaki

AU - Nakamura, Yoshinobu

AU - Kishimoto, Akira

AU - Miyayama, Masaru

AU - Yanagida, Hiroaki

PY - 1996

Y1 - 1996

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AB - Single crystals of (Ba0.96-xLnxSr0.04)TiO3 (Ln=La, Gd) were grown over a composition range of x=0.001 to 0.03. Electrical resistivities of the single crystals were measured by the DC four-probe method. The temperature dependence of resistivities of these crystals changed from semiconductive to metallic at the Curie temperature (TC). Although the room temperature resistivities of Gd-doped single crystals were independent of Gd concentration of 1 to 3 %, they decreased monotonically with increasing the dopant concentration after annealing in a reducing atmosphere.

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KW - Floating zone method

KW - Low resistance

KW - Reducing treatment

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