Single crystal growth and electrical properties of lanthanum- and gadolinium-doped BaTiO3

Naobumi Motohira; Hideaki Okamoto; Yoshinobu Nakamura; Akira Kishimoto; Masaru Miyayama; Hiroaki Yanagida

doi:10.2109/jcersj.104.273

Single crystal growth and electrical properties of lanthanum- and gadolinium-doped BaTiO₃

Naobumi Motohira, Hideaki Okamoto, Yoshinobu Nakamura, Akira Kishimoto, Masaru Miyayama, Hiroaki Yanagida

Research output: Contribution to journal › Article

5 Citations (Scopus)

Abstract

Single crystals of (Ba_0.96-xLn_xSr_0.04)TiO₃ (Ln=La, Gd) were grown over a composition range of x=0.001 to 0.03. Electrical resistivities of the single crystals were measured by the DC four-probe method. The temperature dependence of resistivities of these crystals changed from semiconductive to metallic at the Curie temperature (T_C). Although the room temperature resistivities of Gd-doped single crystals were independent of Gd concentration of 1 to 3 %, they decreased monotonically with increasing the dopant concentration after annealing in a reducing atmosphere.

Original language	English
Pages (from-to)	273-276
Number of pages	4
Journal	Journal of the Ceramic Society of Japan
Volume	104
Issue number	4
DOIs	https://doi.org/10.2109/jcersj.104.273
Publication status	Published - 1996
Externally published	Yes

Keywords

BaTiO
Floating zone method
Low resistance
Reducing treatment
Single crystal

ASJC Scopus subject areas

Ceramics and Composites
Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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Motohira, N., Okamoto, H., Nakamura, Y., Kishimoto, A., Miyayama, M., & Yanagida, H. (1996). Single crystal growth and electrical properties of lanthanum- and gadolinium-doped BaTiO₃. Journal of the Ceramic Society of Japan, 104(4), 273-276. https://doi.org/10.2109/jcersj.104.273

@article{55b2a77ef9b54a3bb765d6e52b3b329a,

title = "Single crystal growth and electrical properties of lanthanum- and gadolinium-doped BaTiO3",

abstract = "Single crystals of (Ba0.96-xLnxSr0.04)TiO3 (Ln=La, Gd) were grown over a composition range of x=0.001 to 0.03. Electrical resistivities of the single crystals were measured by the DC four-probe method. The temperature dependence of resistivities of these crystals changed from semiconductive to metallic at the Curie temperature (TC). Although the room temperature resistivities of Gd-doped single crystals were independent of Gd concentration of 1 to 3 %, they decreased monotonically with increasing the dopant concentration after annealing in a reducing atmosphere.",

keywords = "BaTiO, Floating zone method, Low resistance, Reducing treatment, Single crystal",

author = "Naobumi Motohira and Hideaki Okamoto and Yoshinobu Nakamura and Akira Kishimoto and Masaru Miyayama and Hiroaki Yanagida",

year = "1996",

doi = "10.2109/jcersj.104.273",

language = "English",

volume = "104",

pages = "273--276",

journal = "Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan",

issn = "1882-0743",

publisher = "Ceramic Society of Japan/Nippon Seramikkusu Kyokai",

number = "4",

}

TY - JOUR

T1 - Single crystal growth and electrical properties of lanthanum- and gadolinium-doped BaTiO3

AU - Motohira, Naobumi

AU - Okamoto, Hideaki

AU - Nakamura, Yoshinobu

AU - Kishimoto, Akira

AU - Miyayama, Masaru

AU - Yanagida, Hiroaki

PY - 1996

Y1 - 1996

N2 - Single crystals of (Ba0.96-xLnxSr0.04)TiO3 (Ln=La, Gd) were grown over a composition range of x=0.001 to 0.03. Electrical resistivities of the single crystals were measured by the DC four-probe method. The temperature dependence of resistivities of these crystals changed from semiconductive to metallic at the Curie temperature (TC). Although the room temperature resistivities of Gd-doped single crystals were independent of Gd concentration of 1 to 3 %, they decreased monotonically with increasing the dopant concentration after annealing in a reducing atmosphere.

AB - Single crystals of (Ba0.96-xLnxSr0.04)TiO3 (Ln=La, Gd) were grown over a composition range of x=0.001 to 0.03. Electrical resistivities of the single crystals were measured by the DC four-probe method. The temperature dependence of resistivities of these crystals changed from semiconductive to metallic at the Curie temperature (TC). Although the room temperature resistivities of Gd-doped single crystals were independent of Gd concentration of 1 to 3 %, they decreased monotonically with increasing the dopant concentration after annealing in a reducing atmosphere.

KW - BaTiO

KW - Floating zone method

KW - Low resistance

KW - Reducing treatment

KW - Single crystal

UR - http://www.scopus.com/inward/record.url?scp=0030123196&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030123196&partnerID=8YFLogxK

U2 - 10.2109/jcersj.104.273

DO - 10.2109/jcersj.104.273

M3 - Article

AN - SCOPUS:0030123196

VL - 104

SP - 273

EP - 276

JO - Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan

JF - Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan

SN - 1882-0743

IS - 4

ER -