Single crystal growth and electrical properties of lanthanum- and gadolinium-doped BaTiO3

Naobumi Motohira; Hideaki Okamoto; Yoshinobu Nakamura; Akira Kishimoto; Masaru Miyayama; Hiroaki Yanagida

doi:10.2109/jcersj.104.273

Single crystal growth and electrical properties of lanthanum- and gadolinium-doped BaTiO₃

Naobumi Motohira, Hideaki Okamoto, Yoshinobu Nakamura, Akira Kishimoto, Masaru Miyayama, Hiroaki Yanagida

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Single crystals of (Ba_0.96-xLn_xSr_0.04)TiO₃ (Ln=La, Gd) were grown over a composition range of x=0.001 to 0.03. Electrical resistivities of the single crystals were measured by the DC four-probe method. The temperature dependence of resistivities of these crystals changed from semiconductive to metallic at the Curie temperature (T_C). Although the room temperature resistivities of Gd-doped single crystals were independent of Gd concentration of 1 to 3 %, they decreased monotonically with increasing the dopant concentration after annealing in a reducing atmosphere.

Original language	English
Pages (from-to)	273-276
Number of pages	4
Journal	Journal of the Ceramic Society of Japan
Volume	104
Issue number	4
DOIs	https://doi.org/10.2109/jcersj.104.273
Publication status	Published - 1996
Externally published	Yes

Keywords

BaTiO
Floating zone method
Low resistance
Reducing treatment
Single crystal

ASJC Scopus subject areas

Ceramics and Composites
Chemistry(all)
Condensed Matter Physics
Materials Chemistry

Access to Document

10.2109/jcersj.104.273

Cite this

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title = "Single crystal growth and electrical properties of lanthanum- and gadolinium-doped BaTiO3",

abstract = "Single crystals of (Ba0.96-xLnxSr0.04)TiO3 (Ln=La, Gd) were grown over a composition range of x=0.001 to 0.03. Electrical resistivities of the single crystals were measured by the DC four-probe method. The temperature dependence of resistivities of these crystals changed from semiconductive to metallic at the Curie temperature (TC). Although the room temperature resistivities of Gd-doped single crystals were independent of Gd concentration of 1 to 3 %, they decreased monotonically with increasing the dopant concentration after annealing in a reducing atmosphere.",

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year = "1996",

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T1 - Single crystal growth and electrical properties of lanthanum- and gadolinium-doped BaTiO3

AU - Motohira, Naobumi

AU - Okamoto, Hideaki

AU - Nakamura, Yoshinobu

AU - Kishimoto, Akira

AU - Miyayama, Masaru

AU - Yanagida, Hiroaki

PY - 1996

Y1 - 1996

N2 - Single crystals of (Ba0.96-xLnxSr0.04)TiO3 (Ln=La, Gd) were grown over a composition range of x=0.001 to 0.03. Electrical resistivities of the single crystals were measured by the DC four-probe method. The temperature dependence of resistivities of these crystals changed from semiconductive to metallic at the Curie temperature (TC). Although the room temperature resistivities of Gd-doped single crystals were independent of Gd concentration of 1 to 3 %, they decreased monotonically with increasing the dopant concentration after annealing in a reducing atmosphere.

AB - Single crystals of (Ba0.96-xLnxSr0.04)TiO3 (Ln=La, Gd) were grown over a composition range of x=0.001 to 0.03. Electrical resistivities of the single crystals were measured by the DC four-probe method. The temperature dependence of resistivities of these crystals changed from semiconductive to metallic at the Curie temperature (TC). Although the room temperature resistivities of Gd-doped single crystals were independent of Gd concentration of 1 to 3 %, they decreased monotonically with increasing the dopant concentration after annealing in a reducing atmosphere.

KW - BaTiO

KW - Floating zone method

KW - Low resistance

KW - Reducing treatment

KW - Single crystal

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