Abstract
Single crystals of (Ba0.96-xLnxSr0.04)TiO3 (Ln=La, Gd) were grown over a composition range of x=0.001 to 0.03. Electrical resistivities of the single crystals were measured by the DC four-probe method. The temperature dependence of resistivities of these crystals changed from semiconductive to metallic at the Curie temperature (TC). Although the room temperature resistivities of Gd-doped single crystals were independent of Gd concentration of 1 to 3 %, they decreased monotonically with increasing the dopant concentration after annealing in a reducing atmosphere.
Original language | English |
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Pages (from-to) | 273-276 |
Number of pages | 4 |
Journal | Journal of the Ceramic Society of Japan |
Volume | 104 |
Issue number | 4 |
DOIs | |
Publication status | Published - 1996 |
Externally published | Yes |
Keywords
- BaTiO
- Floating zone method
- Low resistance
- Reducing treatment
- Single crystal
ASJC Scopus subject areas
- Ceramics and Composites
- Chemistry(all)
- Condensed Matter Physics
- Materials Chemistry