Single-crystal growth and de Haas-van Alphen effect of YbAl3

T. Ebihara, S. Uji, C. Terakura, T. Terashima, E. Yamamoto, Y. Haga, Y. Inada, Y. Onuki

Research output: Contribution to journalConference article

28 Citations (Scopus)

Abstract

We succeeded in observing the de Haas-van Alphen (dHvA) oscillation of YbAl3. The single crystals were grown by the self-flux method. The residual resistivity and residual resistivity ratio were 0.5 μΩ cm and 60, respectively. Three fundamental dHvA branches were detected for the magnetic field along the 〈1 0 0〉 direction. Their cyclotron masses were in the range from 8.1 to 22 m0, reflecting a relatively large electronic specific heat coefficient γ = 58 mJ/K2 mol.

Original languageEnglish
Pages (from-to)754-755
Number of pages2
JournalPhysica B: Condensed Matter
Volume281-282
DOIs
Publication statusPublished - Jun 1 2000
Externally publishedYes
EventYamada Conference LI - The International Conference on Strongly Correlated Electron Systems (SCES '99) - Nagano, Jpn
Duration: Aug 24 1999Aug 28 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Ebihara, T., Uji, S., Terakura, C., Terashima, T., Yamamoto, E., Haga, Y., Inada, Y., & Onuki, Y. (2000). Single-crystal growth and de Haas-van Alphen effect of YbAl3. Physica B: Condensed Matter, 281-282, 754-755. https://doi.org/10.1016/S0921-4526(99)00982-5