Simulation of the EUV spectrum of Xe and Sn plasmas

Akira Sasaki, Katsunobu Nishihara, Fumihiro Koike, Takashi Kagawa, Takeshi Nishikawa, Kazumi Fujima, Tohru Kawamura, Hiroyuki Furukawa

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

Complex spectra of Xe and Sn, and their feasibility for use in the lithographic extreme ultraviolet (EUV) source, are investigated. By combining calculations of atomic data using the HULLAC code and the Whiam collisional radiative model with a simple radiative transfer model, the EUV spectrum is shown to originate from a large number of fine structure transitions. Satellite lines of 4d-4f and 4d-5p transitions from near ten times ionized states are found to make a significant contribution to the emission from an optically thick plasma. The wavelengths and transition probabilities of emission lines, charge state distribution, and level population in the plasma, as well as radiation intensity from a laser-produced plasma source have been calculated. The effect of opacity is taken into account assuming a local thermodynamic equilibrium population in the plasma. The calculated, result reproduces the observed spectra both for Xe and Sn, showing applicability of the present method to the spectroscopy of hot dense plasmas.

Original languageEnglish
Pages (from-to)1307-1314
Number of pages8
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume10
Issue number6
DOIs
Publication statusPublished - Nov 2004

Keywords

  • Atomic process
  • Atomic structure
  • Extreme ultraviolet (EUV)
  • Laser plasma interaction
  • Lithography
  • Opacity
  • Plasma spectroscopy
  • Radiative transfer
  • Simulation
  • Sn
  • Xe

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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  • Cite this

    Sasaki, A., Nishihara, K., Koike, F., Kagawa, T., Nishikawa, T., Fujima, K., Kawamura, T., & Furukawa, H. (2004). Simulation of the EUV spectrum of Xe and Sn plasmas. IEEE Journal on Selected Topics in Quantum Electronics, 10(6), 1307-1314. https://doi.org/10.1109/JSTQE.2004.838081