Simulation of electron transport during electron-beam-induced deposition of nanostructures

Francesc Salvat-Pujol, Harald Olaf Jeschke, Roser Valentí

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We present a numerical investigation of energy and charge distributions during electron-beam-induced growth of tungsten nanostructures on SiO2 substrates by using a Monte Carlo simulation of the electron transport. This study gives a quantitative insight into the deposition of energy and charge in the substrate and in the already existing metallic nanostructures in the presence of the electron beam. We analyze electron trajectories, inelastic mean free paths, and the distribution of backscattered electrons in different compositions and at different depths of the deposit. We find that, while in the early stages of the nanostructure growth a significant fraction of electron trajectories still interacts with the substrate, when the nanostructure becomes thicker the transport takes place almost exclusively in the nanostructure. In particular, a larger deposit density leads to enhanced electron backscattering. This work shows how mesoscopic radiation-transport techniques can contribute to a model that addresses the multi-scale nature of the electron-beam-induced deposition (EBID) process. Furthermore, similar simulations can help to understand the role that is played by backscattered electrons and emitted secondary electrons in the change of structural properties of nanostructured materials during post-growth electron-beam treatments.

Original languageEnglish
Pages (from-to)781-792
Number of pages12
JournalBeilstein Journal of Nanotechnology
Volume4
Issue number1
DOIs
Publication statusPublished - Dec 23 2013
Externally publishedYes

Keywords

  • (F)ebid
  • Electron backscattering
  • Electron transport
  • Monte carlo simulation
  • Penelope

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)
  • Electrical and Electronic Engineering

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