SIMS with highly excited primary beams for molecular depth profiling and imaging of organic and biological materials

Jiro Matsuo, Satoshi Ninomiya, Hideaki Yamada, Kazuya Ichiki, Yoshinobu Wakamatsu, Masaki Hada, Toshio Seki, Takaaki Aoki

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

Recent developments in SIMS with both Ar cluster ions and swift heavy ions are presented. With these primary beams, the analysis of organic semiconductors and animal cells shows that one of the key factors to realizing the SIMS analysis of organic materials is high-energy deposition near the surface. Molecular depth profiling and images of organic materials were demonstrated by using SIMS.

Original languageEnglish
Pages (from-to)1612-1615
Number of pages4
JournalSurface and Interface Analysis
Volume42
Issue number10-11
DOIs
Publication statusPublished - Oct 1 2010

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Keywords

  • Cluster ion beam
  • Molecular depth profiling
  • SIMS
  • Swift heavy ion beam

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Matsuo, J., Ninomiya, S., Yamada, H., Ichiki, K., Wakamatsu, Y., Hada, M., Seki, T., & Aoki, T. (2010). SIMS with highly excited primary beams for molecular depth profiling and imaging of organic and biological materials. Surface and Interface Analysis, 42(10-11), 1612-1615. https://doi.org/10.1002/sia.3585