SIMS with highly excited primary beams for molecular depth profiling and imaging of organic and biological materials

Jiro Matsuo; Satoshi Ninomiya; Hideaki Yamada; Kazuya Ichiki; Yoshinobu Wakamatsu; Masaki Hada; Toshio Seki; Takaaki Aoki

doi:10.1002/sia.3585

SIMS with highly excited primary beams for molecular depth profiling and imaging of organic and biological materials

Jiro Matsuo, Satoshi Ninomiya, Hideaki Yamada, Kazuya Ichiki, Yoshinobu Wakamatsu, Masaki Hada, Toshio Seki, Takaaki Aoki

Graduate School of Natural Science and Technology

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

Recent developments in SIMS with both Ar cluster ions and swift heavy ions are presented. With these primary beams, the analysis of organic semiconductors and animal cells shows that one of the key factors to realizing the SIMS analysis of organic materials is high-energy deposition near the surface. Molecular depth profiling and images of organic materials were demonstrated by using SIMS.

Original language	English
Pages (from-to)	1612-1615
Number of pages	4
Journal	Surface and Interface Analysis
Volume	42
Issue number	10-11
DOIs	https://doi.org/10.1002/sia.3585
Publication status	Published - Oct 2010

Keywords

Cluster ion beam
Molecular depth profiling
SIMS
Swift heavy ion beam

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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SIMS with highly excited primary beams for molecular depth profiling and imaging of organic and biological materials. / Matsuo, Jiro; Ninomiya, Satoshi; Yamada, Hideaki; Ichiki, Kazuya; Wakamatsu, Yoshinobu; Hada, Masaki; Seki, Toshio; Aoki, Takaaki.

In: Surface and Interface Analysis, Vol. 42, No. 10-11, 10.2010, p. 1612-1615.

Research output: Contribution to journal › Article › peer-review

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