Silicon single-electron turnstile

Y. Ono, K. Yamazaki, Y. Takahashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we report the first demonstration of the single-electron turnstile, one of the single-charge transfer device, based on Si materials.

Original languageEnglish
Title of host publication61st Device Research Conference, DRC 2003 - Conference Digest
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages137-138
Number of pages2
ISBN (Electronic)0780377273
DOIs
Publication statusPublished - Jan 1 2003
Event61st Device Research Conference, DRC 2003 - Salt Lake City, United States
Duration: Jun 23 2003Jun 25 2003

Publication series

NameDevice Research Conference - Conference Digest, DRC
Volume2003-January
ISSN (Print)1548-3770

Other

Other61st Device Research Conference, DRC 2003
CountryUnited States
CitySalt Lake City
Period6/23/036/25/03

Keywords

  • Application specific integrated circuits
  • Current measurement
  • Laboratories
  • MOSFET circuits
  • Oxidation
  • Silicon
  • Single electron devices
  • Single electron transistors
  • Temperature
  • Threshold voltage

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Ono, Y., Yamazaki, K., & Takahashi, Y. (2003). Silicon single-electron turnstile. In 61st Device Research Conference, DRC 2003 - Conference Digest (pp. 137-138). [1226906] (Device Research Conference - Conference Digest, DRC; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2003.1226906