Silicon self-diffusion in MgSiO3 perovskite at 25 GPa

Daisuke Yamazaki, Takumi Kato, Hisayoshi Yurimoto, Eiji Ohtani, Mitsuhiro Toriumi

Research output: Contribution to journalArticle

88 Citations (Scopus)

Abstract

Silicon self-diffusion coefficients in MgSiO3 perovskite were measured under lower mantle conditions. The MgSiO3 perovskite was synthesized and diffusion annealing experiments were conducted at pressure of 25 GPa and temperature of 1673-2073 K using a MA8 type high-pressure apparatus. The diffusion profiles were obtained by secondary ion mass spectrometry. The lattice and grain boundary diffusion coefficients (D1 and D(gb)) were determined to be D1 [m2/s] = 2.74 X 10-10 exp(-336 [kJ/mol]/RT) and δD(gb) [m3/s] = 7.12 X 10-17 exp(-311 [kJ/mol]/RT), respectively, where δ is the width of grain boundary, R is the gas constant and T is the absolute temperature. These diffusion coefficient play a key role for understanding the rheology of the lower mantle. (C) 2000 Elsevier Science B.V. All rights reserved.

Original languageEnglish
Pages (from-to)299-309
Number of pages11
JournalPhysics of the Earth and Planetary Interiors
Volume119
Issue number3-4
DOIs
Publication statusPublished - May 1 2000
Externally publishedYes

Keywords

  • High pressure and temperature
  • MgSiO perovskite
  • Rheology of the lower mantle
  • Silicon diffusion profile

ASJC Scopus subject areas

  • Astronomy and Astrophysics
  • Geophysics
  • Physics and Astronomy (miscellaneous)
  • Space and Planetary Science

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