Silicon nanodot-array device with multiple gates

Mingyu Jo, Takuya Kaizawa, Masashi Arita, Akira Fujiwara, Kenji Yamazaki, Yukinori Ono, Hiroshi Inokawa, Yasuo Takahashi, Jung Bum Choi

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We fabricated a nanodot-array device with multiple input gates on a silicon-on-insulator (SOI) wafer by using a pattern-dependent oxidation method with multiple input gates, which embodies a new concept of a flexible single-electron device. Although the device can generate many logic functions owing to the capacitive coupling between dots and many gates, the complicated structural configuration makes it difficult to confirm the formation of the nanodot array. For further investigation of this kind of device to achieve higher functionality, it is important to demonstrate experimentally that the dot array is actually formed. We analyzed the oscillation-peak shift caused by the gate voltage change, and successfully determined the location of the dots that contributed to the experimentally observed oscillations.

Original languageEnglish
Pages (from-to)175-178
Number of pages4
JournalMaterials Science in Semiconductor Processing
Volume11
Issue number5
DOIs
Publication statusPublished - Oct 1 2008

Keywords

  • Coulomb blockade
  • Nanodot array
  • Single electron

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Jo, M., Kaizawa, T., Arita, M., Fujiwara, A., Yamazaki, K., Ono, Y., Inokawa, H., Takahashi, Y., & Choi, J. B. (2008). Silicon nanodot-array device with multiple gates. Materials Science in Semiconductor Processing, 11(5), 175-178. https://doi.org/10.1016/j.mssp.2008.12.001