Silicon nanodot-array device with multiple gates

Mingyu Jo; Takuya Kaizawa; Masashi Arita; Akira Fujiwara; Kenji Yamazaki; Yukinori Ono; Hiroshi Inokawa; Yasuo Takahashi; Jung Bum Choi

doi:10.1016/j.mssp.2008.12.001

Silicon nanodot-array device with multiple gates

Mingyu Jo, Takuya Kaizawa, Masashi Arita, Akira Fujiwara, Kenji Yamazaki, Yukinori Ono, Hiroshi Inokawa, Yasuo Takahashi, Jung Bum Choi

Faculty of Engineering

Research output: Contribution to journal › Article

7 Citations (Scopus)

Abstract

We fabricated a nanodot-array device with multiple input gates on a silicon-on-insulator (SOI) wafer by using a pattern-dependent oxidation method with multiple input gates, which embodies a new concept of a flexible single-electron device. Although the device can generate many logic functions owing to the capacitive coupling between dots and many gates, the complicated structural configuration makes it difficult to confirm the formation of the nanodot array. For further investigation of this kind of device to achieve higher functionality, it is important to demonstrate experimentally that the dot array is actually formed. We analyzed the oscillation-peak shift caused by the gate voltage change, and successfully determined the location of the dots that contributed to the experimentally observed oscillations.

Original language	English
Pages (from-to)	175-178
Number of pages	4
Journal	Materials Science in Semiconductor Processing
Volume	11
Issue number	5
DOIs	https://doi.org/10.1016/j.mssp.2008.12.001
Publication status	Published - Oct 1 2008

Keywords

Coulomb blockade
Nanodot array
Single electron

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mssp.2008.12.001

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Jo, M., Kaizawa, T., Arita, M., Fujiwara, A., Yamazaki, K., Ono, Y., Inokawa, H., Takahashi, Y., & Choi, J. B. (2008). Silicon nanodot-array device with multiple gates. Materials Science in Semiconductor Processing, 11(5), 175-178. https://doi.org/10.1016/j.mssp.2008.12.001

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title = "Silicon nanodot-array device with multiple gates",

abstract = "We fabricated a nanodot-array device with multiple input gates on a silicon-on-insulator (SOI) wafer by using a pattern-dependent oxidation method with multiple input gates, which embodies a new concept of a flexible single-electron device. Although the device can generate many logic functions owing to the capacitive coupling between dots and many gates, the complicated structural configuration makes it difficult to confirm the formation of the nanodot array. For further investigation of this kind of device to achieve higher functionality, it is important to demonstrate experimentally that the dot array is actually formed. We analyzed the oscillation-peak shift caused by the gate voltage change, and successfully determined the location of the dots that contributed to the experimentally observed oscillations.",

keywords = "Coulomb blockade, Nanodot array, Single electron",

author = "Mingyu Jo and Takuya Kaizawa and Masashi Arita and Akira Fujiwara and Kenji Yamazaki and Yukinori Ono and Hiroshi Inokawa and Yasuo Takahashi and Choi, {Jung Bum}",

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AU - Jo, Mingyu

AU - Kaizawa, Takuya

AU - Arita, Masashi

AU - Fujiwara, Akira

AU - Yamazaki, Kenji

AU - Ono, Yukinori

AU - Inokawa, Hiroshi

AU - Takahashi, Yasuo

AU - Choi, Jung Bum

PY - 2008/10/1

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N2 - We fabricated a nanodot-array device with multiple input gates on a silicon-on-insulator (SOI) wafer by using a pattern-dependent oxidation method with multiple input gates, which embodies a new concept of a flexible single-electron device. Although the device can generate many logic functions owing to the capacitive coupling between dots and many gates, the complicated structural configuration makes it difficult to confirm the formation of the nanodot array. For further investigation of this kind of device to achieve higher functionality, it is important to demonstrate experimentally that the dot array is actually formed. We analyzed the oscillation-peak shift caused by the gate voltage change, and successfully determined the location of the dots that contributed to the experimentally observed oscillations.

AB - We fabricated a nanodot-array device with multiple input gates on a silicon-on-insulator (SOI) wafer by using a pattern-dependent oxidation method with multiple input gates, which embodies a new concept of a flexible single-electron device. Although the device can generate many logic functions owing to the capacitive coupling between dots and many gates, the complicated structural configuration makes it difficult to confirm the formation of the nanodot array. For further investigation of this kind of device to achieve higher functionality, it is important to demonstrate experimentally that the dot array is actually formed. We analyzed the oscillation-peak shift caused by the gate voltage change, and successfully determined the location of the dots that contributed to the experimentally observed oscillations.

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KW - Single electron

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