Abstract
We fabricated a nanodot-array device with multiple input gates on a silicon-on-insulator (SOI) wafer by using a pattern-dependent oxidation method with multiple input gates, which embodies a new concept of a flexible single-electron device. Although the device can generate many logic functions owing to the capacitive coupling between dots and many gates, the complicated structural configuration makes it difficult to confirm the formation of the nanodot array. For further investigation of this kind of device to achieve higher functionality, it is important to demonstrate experimentally that the dot array is actually formed. We analyzed the oscillation-peak shift caused by the gate voltage change, and successfully determined the location of the dots that contributed to the experimentally observed oscillations.
| Original language | English |
|---|---|
| Pages (from-to) | 175-178 |
| Number of pages | 4 |
| Journal | Materials Science in Semiconductor Processing |
| Volume | 11 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - Oct 2008 |
| Externally published | Yes |
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Keywords
- Coulomb blockade
- Nanodot array
- Single electron
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering
- Mechanics of Materials
Cite this
Silicon nanodot-array device with multiple gates. / Jo, Mingyu; Kaizawa, Takuya; Arita, Masashi; Fujiwara, Akira; Yamazaki, Kenji; Ono, Yukinori; Inokawa, Hiroshi; Takahashi, Yasuo; Choi, Jung Bum.
In: Materials Science in Semiconductor Processing, Vol. 11, No. 5, 10.2008, p. 175-178.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Silicon nanodot-array device with multiple gates
AU - Jo, Mingyu
AU - Kaizawa, Takuya
AU - Arita, Masashi
AU - Fujiwara, Akira
AU - Yamazaki, Kenji
AU - Ono, Yukinori
AU - Inokawa, Hiroshi
AU - Takahashi, Yasuo
AU - Choi, Jung Bum
PY - 2008/10
Y1 - 2008/10
N2 - We fabricated a nanodot-array device with multiple input gates on a silicon-on-insulator (SOI) wafer by using a pattern-dependent oxidation method with multiple input gates, which embodies a new concept of a flexible single-electron device. Although the device can generate many logic functions owing to the capacitive coupling between dots and many gates, the complicated structural configuration makes it difficult to confirm the formation of the nanodot array. For further investigation of this kind of device to achieve higher functionality, it is important to demonstrate experimentally that the dot array is actually formed. We analyzed the oscillation-peak shift caused by the gate voltage change, and successfully determined the location of the dots that contributed to the experimentally observed oscillations.
AB - We fabricated a nanodot-array device with multiple input gates on a silicon-on-insulator (SOI) wafer by using a pattern-dependent oxidation method with multiple input gates, which embodies a new concept of a flexible single-electron device. Although the device can generate many logic functions owing to the capacitive coupling between dots and many gates, the complicated structural configuration makes it difficult to confirm the formation of the nanodot array. For further investigation of this kind of device to achieve higher functionality, it is important to demonstrate experimentally that the dot array is actually formed. We analyzed the oscillation-peak shift caused by the gate voltage change, and successfully determined the location of the dots that contributed to the experimentally observed oscillations.
KW - Coulomb blockade
KW - Nanodot array
KW - Single electron
UR - http://www.scopus.com/inward/record.url?scp=70349779701&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=70349779701&partnerID=8YFLogxK
U2 - 10.1016/j.mssp.2008.12.001
DO - 10.1016/j.mssp.2008.12.001
M3 - Article
AN - SCOPUS:70349779701
VL - 11
SP - 175
EP - 178
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
SN - 1369-8001
IS - 5
ER -