Silicon double-island single-electron device

Akira Fujiwara, Yasuo Takahashi, Kenji Yamazaki, Hideo Namatsu, Masao Nagase, Kenji Kurihara, Katsumi Murase

Research output: Contribution to journalConference article

10 Citations (Scopus)

Abstract

A three-current-terminal single-electron device including two capacitively-coupled Si islands and gates that can control each island was fabricated on a Si-on-insulator wafer. Each island was embedded in one branch of a T-shaped Si wire. Current switching between the two branches was performed at 30 K by using the gate voltage to control the Coulomb blockade at each island. A correlation between these two currents was also found, which opens up the possibility of one-by-one transfer of electrons in this device.

Original languageEnglish
Pages (from-to)163-166
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
Publication statusPublished - Dec 1 1997
Event1997 International Electron Devices Meeting - Washington, DC, USA
Duration: Dec 7 1997Dec 10 1997

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Fujiwara, A., Takahashi, Y., Yamazaki, K., Namatsu, H., Nagase, M., Kurihara, K., & Murase, K. (1997). Silicon double-island single-electron device. Technical Digest - International Electron Devices Meeting, IEDM, 163-166.