Silicon double-island single-electron device

Akira Fujiwara, Yasuo Takahashi, Kenji Yamazaki, Hideo Namatsu, Masao Nagase, Kenji Kurihara, Katsumi Murase

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

A three-current-terminal single-electron device including two capacitively-coupled Si islands and gates that can control each island was fabricated on a Si-on-insulator wafer. Each island was embedded in one branch of a T-shaped Si wire. Current switching between the two branches was performed at 30 K by using the gate voltage to control the Coulomb blockade at each island. A correlation between these two currents was also found, which opens up the possibility of one-by-one transfer of electrons in this device.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
Pages163-166
Number of pages4
Publication statusPublished - 1997
Externally publishedYes
Event1997 International Electron Devices Meeting - Washington, DC, USA
Duration: Dec 7 1997Dec 10 1997

Other

Other1997 International Electron Devices Meeting
CityWashington, DC, USA
Period12/7/9712/10/97

Fingerprint

Electron devices
Coulomb blockade
Silicon
Wire
Electrons
Electric potential

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Fujiwara, A., Takahashi, Y., Yamazaki, K., Namatsu, H., Nagase, M., Kurihara, K., & Murase, K. (1997). Silicon double-island single-electron device. In Technical Digest - International Electron Devices Meeting, IEDM (pp. 163-166)

Silicon double-island single-electron device. / Fujiwara, Akira; Takahashi, Yasuo; Yamazaki, Kenji; Namatsu, Hideo; Nagase, Masao; Kurihara, Kenji; Murase, Katsumi.

Technical Digest - International Electron Devices Meeting, IEDM. 1997. p. 163-166.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fujiwara, A, Takahashi, Y, Yamazaki, K, Namatsu, H, Nagase, M, Kurihara, K & Murase, K 1997, Silicon double-island single-electron device. in Technical Digest - International Electron Devices Meeting, IEDM. pp. 163-166, 1997 International Electron Devices Meeting, Washington, DC, USA, 12/7/97.
Fujiwara A, Takahashi Y, Yamazaki K, Namatsu H, Nagase M, Kurihara K et al. Silicon double-island single-electron device. In Technical Digest - International Electron Devices Meeting, IEDM. 1997. p. 163-166
Fujiwara, Akira ; Takahashi, Yasuo ; Yamazaki, Kenji ; Namatsu, Hideo ; Nagase, Masao ; Kurihara, Kenji ; Murase, Katsumi. / Silicon double-island single-electron device. Technical Digest - International Electron Devices Meeting, IEDM. 1997. pp. 163-166
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