Silicon double-island single-electron device

Akira Fujiwara; Yasuo Takahashi; Kenji Yamazaki; Hideo Namatsu; Masao Nagase; Kenji Kurihara; Katsumi Murase

Silicon double-island single-electron device

Akira Fujiwara, Yasuo Takahashi, Kenji Yamazaki, Hideo Namatsu, Masao Nagase, Kenji Kurihara, Katsumi Murase

Faculty of Engineering

Research output: Contribution to journal › Conference article › peer-review

10 Citations (Scopus)

Abstract

A three-current-terminal single-electron device including two capacitively-coupled Si islands and gates that can control each island was fabricated on a Si-on-insulator wafer. Each island was embedded in one branch of a T-shaped Si wire. Current switching between the two branches was performed at 30 K by using the gate voltage to control the Coulomb blockade at each island. A correlation between these two currents was also found, which opens up the possibility of one-by-one transfer of electrons in this device.

Original language	English
Pages (from-to)	163-166
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
Publication status	Published - Dec 1 1997
Event	1997 International Electron Devices Meeting - Washington, DC, USA Duration: Dec 7 1997 → Dec 10 1997

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

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title = "Silicon double-island single-electron device",

abstract = "A three-current-terminal single-electron device including two capacitively-coupled Si islands and gates that can control each island was fabricated on a Si-on-insulator wafer. Each island was embedded in one branch of a T-shaped Si wire. Current switching between the two branches was performed at 30 K by using the gate voltage to control the Coulomb blockade at each island. A correlation between these two currents was also found, which opens up the possibility of one-by-one transfer of electrons in this device.",

author = "Akira Fujiwara and Yasuo Takahashi and Kenji Yamazaki and Hideo Namatsu and Masao Nagase and Kenji Kurihara and Katsumi Murase",

year = "1997",

month = dec,

day = "1",

language = "English",

pages = "163--166",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "1997 International Electron Devices Meeting ; Conference date: 07-12-1997 Through 10-12-1997",

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TY - JOUR

T1 - Silicon double-island single-electron device

AU - Fujiwara, Akira

AU - Takahashi, Yasuo

AU - Yamazaki, Kenji

AU - Namatsu, Hideo

AU - Nagase, Masao

AU - Kurihara, Kenji

AU - Murase, Katsumi

PY - 1997/12/1

Y1 - 1997/12/1

N2 - A three-current-terminal single-electron device including two capacitively-coupled Si islands and gates that can control each island was fabricated on a Si-on-insulator wafer. Each island was embedded in one branch of a T-shaped Si wire. Current switching between the two branches was performed at 30 K by using the gate voltage to control the Coulomb blockade at each island. A correlation between these two currents was also found, which opens up the possibility of one-by-one transfer of electrons in this device.

AB - A three-current-terminal single-electron device including two capacitively-coupled Si islands and gates that can control each island was fabricated on a Si-on-insulator wafer. Each island was embedded in one branch of a T-shaped Si wire. Current switching between the two branches was performed at 30 K by using the gate voltage to control the Coulomb blockade at each island. A correlation between these two currents was also found, which opens up the possibility of one-by-one transfer of electrons in this device.

UR - http://www.scopus.com/inward/record.url?scp=84886448149&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84886448149&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:84886448149

SN - 0163-1918

SP - 163

EP - 166

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 1997 International Electron Devices Meeting

Y2 - 7 December 1997 through 10 December 1997

ER -

Silicon double-island single-electron device

Abstract

ASJC Scopus subject areas

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