Significant suppression of island growth in epitaxial (Pb,La)(Zr,Ti)O3 thin films by two-step growth technique

Shinya Kondo, Tomoaki Yamada, Masahito Yoshino, Tadashi Shiota, Kazuo Shinozaki, Takanori Nagasaki

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

(001)-epitaxial (Pb0.91La0.09)(Zr0.65Ti0.35)O3 (PLZT) ferroelectric thin films were fabricated on SrTiO3 and MgO substrates, with an SrRuO3 bottom electrode layer, using pulsed laser deposition. When films were deposited in a single step at a high temperature conventionally used for epitaxial growth, island growth was observed. To suppress the island growth, we used a two-step growth technique. First, a thin initial layer was deposited at a low temperature to promote rapid strain relaxation from the lattice mismatch. Consequently, the island growth was suppressed and when a second layer was deposited at high temperature, a remarkably flatter surface was achieved as compared with that of conventional one-step-grown films. The two-step-grown PLZT films are promising for use in ferroelectric thin film-based plasmonic electro-optic devices.

Original languageEnglish
Pages (from-to)1127-1131
Number of pages5
JournalJournal of the Ceramic Society of Japan
Volume124
Issue number10
DOIs
Publication statusPublished - Oct 1 2016
Externally publishedYes

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Keywords

  • Electro-optic device
  • Epitaxial growth
  • Ferroelectric
  • Growth mode
  • PLZT

ASJC Scopus subject areas

  • Ceramics and Composites
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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