Significant suppression of island growth in epitaxial (Pb,La)(Zr,Ti)O3 thin films by two-step growth technique

Shinya Kondo; Tomoaki Yamada; Masahito Yoshino; Tadashi Shiota; Kazuo Shinozaki; Takanori Nagasaki

doi:10.2109/jcersj2.16110

Significant suppression of island growth in epitaxial (Pb,La)(Zr,Ti)O₃ thin films by two-step growth technique

Shinya Kondo, Tomoaki Yamada, Masahito Yoshino, Tadashi Shiota, Kazuo Shinozaki, Takanori Nagasaki

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

(001)-epitaxial (Pb_0.91La_0.09)(Zr_0.65Ti_0.35)O₃ (PLZT) ferroelectric thin films were fabricated on SrTiO₃ and MgO substrates, with an SrRuO3 bottom electrode layer, using pulsed laser deposition. When films were deposited in a single step at a high temperature conventionally used for epitaxial growth, island growth was observed. To suppress the island growth, we used a two-step growth technique. First, a thin initial layer was deposited at a low temperature to promote rapid strain relaxation from the lattice mismatch. Consequently, the island growth was suppressed and when a second layer was deposited at high temperature, a remarkably flatter surface was achieved as compared with that of conventional one-step-grown films. The two-step-grown PLZT films are promising for use in ferroelectric thin film-based plasmonic electro-optic devices.

Original language	English
Pages (from-to)	1127-1131
Number of pages	5
Journal	Journal of the Ceramic Society of Japan
Volume	124
Issue number	10
DOIs	https://doi.org/10.2109/jcersj2.16110
Publication status	Published - Oct 2016
Externally published	Yes

Keywords

Electro-optic device
Epitaxial growth
Ferroelectric
Growth mode
PLZT

ASJC Scopus subject areas

Ceramics and Composites
Chemistry(all)
Condensed Matter Physics
Materials Chemistry

Access to Document

10.2109/jcersj2.16110

Cite this

@article{b3960ae9a3c44a6390df90d39550c13d,

title = "Significant suppression of island growth in epitaxial (Pb,La)(Zr,Ti)O3 thin films by two-step growth technique",

abstract = "(001)-epitaxial (Pb0.91La0.09)(Zr0.65Ti0.35)O3 (PLZT) ferroelectric thin films were fabricated on SrTiO3 and MgO substrates, with an SrRuO3 bottom electrode layer, using pulsed laser deposition. When films were deposited in a single step at a high temperature conventionally used for epitaxial growth, island growth was observed. To suppress the island growth, we used a two-step growth technique. First, a thin initial layer was deposited at a low temperature to promote rapid strain relaxation from the lattice mismatch. Consequently, the island growth was suppressed and when a second layer was deposited at high temperature, a remarkably flatter surface was achieved as compared with that of conventional one-step-grown films. The two-step-grown PLZT films are promising for use in ferroelectric thin film-based plasmonic electro-optic devices.",

keywords = "Electro-optic device, Epitaxial growth, Ferroelectric, Growth mode, PLZT",

author = "Shinya Kondo and Tomoaki Yamada and Masahito Yoshino and Tadashi Shiota and Kazuo Shinozaki and Takanori Nagasaki",

note = "Funding Information: This work was partly supported by Concert- Japan Project {"}FF-Photon{"} from Japan Science and Technology Agency. We thank Dr. Ping Ma at ETH-Zurich for fruitful discussions. Publisher Copyright: {\textcopyright}2016 The Ceramic Society of Japan. All rights reserved.",

year = "2016",

month = oct,

doi = "10.2109/jcersj2.16110",

language = "English",

volume = "124",

pages = "1127--1131",

journal = "Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan",

issn = "1882-0743",

publisher = "Ceramic Society of Japan/Nippon Seramikkusu Kyokai",

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TY - JOUR

T1 - Significant suppression of island growth in epitaxial (Pb,La)(Zr,Ti)O3 thin films by two-step growth technique

AU - Kondo, Shinya

AU - Yamada, Tomoaki

AU - Yoshino, Masahito

AU - Shiota, Tadashi

AU - Shinozaki, Kazuo

AU - Nagasaki, Takanori

N1 - Funding Information: This work was partly supported by Concert- Japan Project "FF-Photon" from Japan Science and Technology Agency. We thank Dr. Ping Ma at ETH-Zurich for fruitful discussions. Publisher Copyright: ©2016 The Ceramic Society of Japan. All rights reserved.

PY - 2016/10

Y1 - 2016/10

N2 - (001)-epitaxial (Pb0.91La0.09)(Zr0.65Ti0.35)O3 (PLZT) ferroelectric thin films were fabricated on SrTiO3 and MgO substrates, with an SrRuO3 bottom electrode layer, using pulsed laser deposition. When films were deposited in a single step at a high temperature conventionally used for epitaxial growth, island growth was observed. To suppress the island growth, we used a two-step growth technique. First, a thin initial layer was deposited at a low temperature to promote rapid strain relaxation from the lattice mismatch. Consequently, the island growth was suppressed and when a second layer was deposited at high temperature, a remarkably flatter surface was achieved as compared with that of conventional one-step-grown films. The two-step-grown PLZT films are promising for use in ferroelectric thin film-based plasmonic electro-optic devices.

AB - (001)-epitaxial (Pb0.91La0.09)(Zr0.65Ti0.35)O3 (PLZT) ferroelectric thin films were fabricated on SrTiO3 and MgO substrates, with an SrRuO3 bottom electrode layer, using pulsed laser deposition. When films were deposited in a single step at a high temperature conventionally used for epitaxial growth, island growth was observed. To suppress the island growth, we used a two-step growth technique. First, a thin initial layer was deposited at a low temperature to promote rapid strain relaxation from the lattice mismatch. Consequently, the island growth was suppressed and when a second layer was deposited at high temperature, a remarkably flatter surface was achieved as compared with that of conventional one-step-grown films. The two-step-grown PLZT films are promising for use in ferroelectric thin film-based plasmonic electro-optic devices.

KW - Electro-optic device

KW - Epitaxial growth

KW - Ferroelectric

KW - Growth mode

KW - PLZT

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