Significant suppression of island growth in epitaxial (Pb,La)(Zr,Ti)O3 thin films by two-step growth technique

Shinya Kondo, Tomoaki Yamada, Masahito Yoshino, Tadashi Shiota, Kazuo Shinozaki, Takanori Nagasaki

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

(001)-epitaxial (Pb0.91La0.09)(Zr0.65Ti0.35)O3 (PLZT) ferroelectric thin films were fabricated on SrTiO3 and MgO substrates, with an SrRuO3 bottom electrode layer, using pulsed laser deposition. When films were deposited in a single step at a high temperature conventionally used for epitaxial growth, island growth was observed. To suppress the island growth, we used a two-step growth technique. First, a thin initial layer was deposited at a low temperature to promote rapid strain relaxation from the lattice mismatch. Consequently, the island growth was suppressed and when a second layer was deposited at high temperature, a remarkably flatter surface was achieved as compared with that of conventional one-step-grown films. The two-step-grown PLZT films are promising for use in ferroelectric thin film-based plasmonic electro-optic devices.

Original languageEnglish
Pages (from-to)1127-1131
Number of pages5
JournalJournal of the Ceramic Society of Japan
Volume124
Issue number10
DOIs
Publication statusPublished - Oct 1 2016
Externally publishedYes

Fingerprint

retarding
Thin films
Ferroelectric thin films
thin films
Strain relaxation
Lattice mismatch
Pulsed laser deposition
Electrooptical effects
Epitaxial growth
Temperature
electro-optics
pulsed laser deposition
flat surfaces
Electrodes
Substrates
electrodes
strontium titanium oxide

Keywords

  • Electro-optic device
  • Epitaxial growth
  • Ferroelectric
  • Growth mode
  • PLZT

ASJC Scopus subject areas

  • Ceramics and Composites
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Significant suppression of island growth in epitaxial (Pb,La)(Zr,Ti)O3 thin films by two-step growth technique. / Kondo, Shinya; Yamada, Tomoaki; Yoshino, Masahito; Shiota, Tadashi; Shinozaki, Kazuo; Nagasaki, Takanori.

In: Journal of the Ceramic Society of Japan, Vol. 124, No. 10, 01.10.2016, p. 1127-1131.

Research output: Contribution to journalArticle

Kondo, Shinya ; Yamada, Tomoaki ; Yoshino, Masahito ; Shiota, Tadashi ; Shinozaki, Kazuo ; Nagasaki, Takanori. / Significant suppression of island growth in epitaxial (Pb,La)(Zr,Ti)O3 thin films by two-step growth technique. In: Journal of the Ceramic Society of Japan. 2016 ; Vol. 124, No. 10. pp. 1127-1131.
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AU - Yamada, Tomoaki

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AU - Shiota, Tadashi

AU - Shinozaki, Kazuo

AU - Nagasaki, Takanori

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AB - (001)-epitaxial (Pb0.91La0.09)(Zr0.65Ti0.35)O3 (PLZT) ferroelectric thin films were fabricated on SrTiO3 and MgO substrates, with an SrRuO3 bottom electrode layer, using pulsed laser deposition. When films were deposited in a single step at a high temperature conventionally used for epitaxial growth, island growth was observed. To suppress the island growth, we used a two-step growth technique. First, a thin initial layer was deposited at a low temperature to promote rapid strain relaxation from the lattice mismatch. Consequently, the island growth was suppressed and when a second layer was deposited at high temperature, a remarkably flatter surface was achieved as compared with that of conventional one-step-grown films. The two-step-grown PLZT films are promising for use in ferroelectric thin film-based plasmonic electro-optic devices.

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