Signature of high T c above 25 K in high quality superconducting diamond

Hiroyuki Okazaki, Takanori Wakita, Takayuki Muro, Tetsuya Nakamura, Yuji Muraoka, Takayoshi Yokoya, Shin Ichiro Kurihara, Hiroshi Kawarada, Tamio Oguchi, Yoshihiko Takano

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Abstract

We have observed zero resistivity above 10 K and an onset of resistivity reduction at 25.2 K in a heavily B-doped diamond film. However, the effective carrier concentration is similar to that of superconducting diamond with a lower Tc. We found that the carrier has a longer mean free path and lifetime than in the previous report, indicating that this highest Tc diamond has better crystallinity compared to that of other superconducting diamond films. In addition, the susceptibility shows a small transition above 20 K in the high quality diamond, suggesting a signature of superconductivity above 20 K. These results strongly suggest that heavier carrier doped defect-free crystalline diamond could give rise to high Tc diamond.

Original languageEnglish
Article number052601
JournalApplied Physics Letters
Volume106
Issue number5
DOIs
Publication statusPublished - Feb 2 2015

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Okazaki, H., Wakita, T., Muro, T., Nakamura, T., Muraoka, Y., Yokoya, T., Kurihara, S. I., Kawarada, H., Oguchi, T., & Takano, Y. (2015). Signature of high T c above 25 K in high quality superconducting diamond. Applied Physics Letters, 106(5), [052601]. https://doi.org/10.1063/1.4907411