SiC islands grown on Si(111)-(7 × 7) and Si(001)-(2 × 1) surfaces by C60 precursor

K. Sakamoto; M. Harada; H. Ashima; T. Suzuki; T. Wakita; A. Kasuya; S. Suto

SiC islands grown on Si(111)-(7 × 7) and Si(001)-(2 × 1) surfaces by C₆₀ precursor

K. Sakamoto, M. Harada, H. Ashima, T. Suzuki, T. Wakita, A. Kasuya, S. Suto

Research output: Contribution to journal › Article › peer-review

Abstract

We have investigated the formation processes and characteristics of SiC islands grown on the Si(111)-(7 × 7) and Si(001)-(2 × 1) surfaces by C₆₀ precursor using high resolution electron energy loss spectroscopy (HREELS). The SiC islands are prepared by heating the C₆₀ adsorbed Si surfaces and confirmed by the observation of the optical surface phonon, Fucks-Kliewer mode. We found that SiC islands are formed at 1170 K and 1120 K on the Si(111)-(7 × 7) and Si(001)-(2 × 1) surfaces, respectively. We attribute the difference in the formation temperature to the different amount of charge which is transferred from Si surface to C₆₀ molecule at 500 K. The difference in the scattering cross-section of the Fucks-Kliewer mode indicates the different shape of SiC islands on each surface.

Original language	English
Pages (from-to)	897-903
Number of pages	7
Journal	Journal of Electron Spectroscopy and Related Phenomena
Volume	88-91
Publication status	Published - Mar 1 1998
Externally published	Yes

Keywords

Charge transfer
Electron energy loss spectroscopy
Fullerenes
Silicon
Silicon carbide
Surface phonon

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Radiation
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Spectroscopy
Physical and Theoretical Chemistry

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Cite this

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title = "SiC islands grown on Si(111)-(7 × 7) and Si(001)-(2 × 1) surfaces by C60 precursor",

abstract = "We have investigated the formation processes and characteristics of SiC islands grown on the Si(111)-(7 × 7) and Si(001)-(2 × 1) surfaces by C60 precursor using high resolution electron energy loss spectroscopy (HREELS). The SiC islands are prepared by heating the C60 adsorbed Si surfaces and confirmed by the observation of the optical surface phonon, Fucks-Kliewer mode. We found that SiC islands are formed at 1170 K and 1120 K on the Si(111)-(7 × 7) and Si(001)-(2 × 1) surfaces, respectively. We attribute the difference in the formation temperature to the different amount of charge which is transferred from Si surface to C60 molecule at 500 K. The difference in the scattering cross-section of the Fucks-Kliewer mode indicates the different shape of SiC islands on each surface.",

keywords = "Charge transfer, Electron energy loss spectroscopy, Fullerenes, Silicon, Silicon carbide, Surface phonon",

author = "K. Sakamoto and M. Harada and H. Ashima and T. Suzuki and T. Wakita and A. Kasuya and S. Suto",

year = "1998",

month = mar,

day = "1",

language = "English",

volume = "88-91",

pages = "897--903",

journal = "Journal of Electron Spectroscopy and Related Phenomena",

issn = "0368-2048",

publisher = "Elsevier",

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TY - JOUR

T1 - SiC islands grown on Si(111)-(7 × 7) and Si(001)-(2 × 1) surfaces by C60 precursor

AU - Sakamoto, K.

AU - Harada, M.

AU - Ashima, H.

AU - Suzuki, T.

AU - Wakita, T.

AU - Kasuya, A.

AU - Suto, S.

PY - 1998/3/1

Y1 - 1998/3/1

N2 - We have investigated the formation processes and characteristics of SiC islands grown on the Si(111)-(7 × 7) and Si(001)-(2 × 1) surfaces by C60 precursor using high resolution electron energy loss spectroscopy (HREELS). The SiC islands are prepared by heating the C60 adsorbed Si surfaces and confirmed by the observation of the optical surface phonon, Fucks-Kliewer mode. We found that SiC islands are formed at 1170 K and 1120 K on the Si(111)-(7 × 7) and Si(001)-(2 × 1) surfaces, respectively. We attribute the difference in the formation temperature to the different amount of charge which is transferred from Si surface to C60 molecule at 500 K. The difference in the scattering cross-section of the Fucks-Kliewer mode indicates the different shape of SiC islands on each surface.

AB - We have investigated the formation processes and characteristics of SiC islands grown on the Si(111)-(7 × 7) and Si(001)-(2 × 1) surfaces by C60 precursor using high resolution electron energy loss spectroscopy (HREELS). The SiC islands are prepared by heating the C60 adsorbed Si surfaces and confirmed by the observation of the optical surface phonon, Fucks-Kliewer mode. We found that SiC islands are formed at 1170 K and 1120 K on the Si(111)-(7 × 7) and Si(001)-(2 × 1) surfaces, respectively. We attribute the difference in the formation temperature to the different amount of charge which is transferred from Si surface to C60 molecule at 500 K. The difference in the scattering cross-section of the Fucks-Kliewer mode indicates the different shape of SiC islands on each surface.

KW - Charge transfer

KW - Electron energy loss spectroscopy

KW - Fullerenes

KW - Silicon

KW - Silicon carbide

KW - Surface phonon

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M3 - Article

AN - SCOPUS:17744418053

VL - 88-91

SP - 897

EP - 903

JO - Journal of Electron Spectroscopy and Related Phenomena

JF - Journal of Electron Spectroscopy and Related Phenomena

SN - 0368-2048