Abstract
We have investigated the formation processes and characteristics of SiC islands grown on the Si(111)-(7 × 7) and Si(001)-(2 × 1) surfaces by C60 precursor using high resolution electron energy loss spectroscopy (HREELS). The SiC islands are prepared by heating the C60 adsorbed Si surfaces and confirmed by the observation of the optical surface phonon, Fucks-Kliewer mode. We found that SiC islands are formed at 1170 K and 1120 K on the Si(111)-(7 × 7) and Si(001)-(2 × 1) surfaces, respectively. We attribute the difference in the formation temperature to the different amount of charge which is transferred from Si surface to C60 molecule at 500 K. The difference in the scattering cross-section of the Fucks-Kliewer mode indicates the different shape of SiC islands on each surface.
Original language | English |
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Pages (from-to) | 897-903 |
Number of pages | 7 |
Journal | Journal of Electron Spectroscopy and Related Phenomena |
Volume | 88-91 |
Publication status | Published - Mar 1 1998 |
Externally published | Yes |
Keywords
- Charge transfer
- Electron energy loss spectroscopy
- Fullerenes
- Silicon
- Silicon carbide
- Surface phonon
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Radiation
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Spectroscopy
- Physical and Theoretical Chemistry