SiC islands grown on Si(111)-(7 × 7) and Si(001)-(2 × 1) surfaces by C60 precursor

K. Sakamoto, M. Harada, H. Ashima, T. Suzuki, T. Wakita, A. Kasuya, S. Suto

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We have investigated the formation processes and characteristics of SiC islands grown on the Si(111)-(7 × 7) and Si(001)-(2 × 1) surfaces by C60 precursor using high resolution electron energy loss spectroscopy (HREELS). The SiC islands are prepared by heating the C60 adsorbed Si surfaces and confirmed by the observation of the optical surface phonon, Fucks-Kliewer mode. We found that SiC islands are formed at 1170 K and 1120 K on the Si(111)-(7 × 7) and Si(001)-(2 × 1) surfaces, respectively. We attribute the difference in the formation temperature to the different amount of charge which is transferred from Si surface to C60 molecule at 500 K. The difference in the scattering cross-section of the Fucks-Kliewer mode indicates the different shape of SiC islands on each surface.

Original languageEnglish
Pages (from-to)897-903
Number of pages7
JournalJournal of Electron Spectroscopy and Related Phenomena
Volume88-91
Publication statusPublished - Mar 1 1998
Externally publishedYes

Keywords

  • Charge transfer
  • Electron energy loss spectroscopy
  • Fullerenes
  • Silicon
  • Silicon carbide
  • Surface phonon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Radiation
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Spectroscopy
  • Physical and Theoretical Chemistry

Fingerprint Dive into the research topics of 'SiC islands grown on Si(111)-(7 × 7) and Si(001)-(2 × 1) surfaces by C<sub>60</sub> precursor'. Together they form a unique fingerprint.

  • Cite this

    Sakamoto, K., Harada, M., Ashima, H., Suzuki, T., Wakita, T., Kasuya, A., & Suto, S. (1998). SiC islands grown on Si(111)-(7 × 7) and Si(001)-(2 × 1) surfaces by C60 precursor. Journal of Electron Spectroscopy and Related Phenomena, 88-91, 897-903.