SiC islands grown on Si(111)-(7 × 7) and Si(001)-(2 × 1) surfaces by C60 precursor

K. Sakamoto, M. Harada, H. Ashima, T. Suzuki, Takanori Wakita, A. Kasuya, S. Suto

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We have investigated the formation processes and characteristics of SiC islands grown on the Si(111)-(7 × 7) and Si(001)-(2 × 1) surfaces by C60 precursor using high resolution electron energy loss spectroscopy (HREELS). The SiC islands are prepared by heating the C60 adsorbed Si surfaces and confirmed by the observation of the optical surface phonon, Fucks-Kliewer mode. We found that SiC islands are formed at 1170 K and 1120 K on the Si(111)-(7 × 7) and Si(001)-(2 × 1) surfaces, respectively. We attribute the difference in the formation temperature to the different amount of charge which is transferred from Si surface to C60 molecule at 500 K. The difference in the scattering cross-section of the Fucks-Kliewer mode indicates the different shape of SiC islands on each surface.

Original languageEnglish
Pages (from-to)897-903
Number of pages7
JournalJournal of Electron Spectroscopy and Related Phenomena
Volume88-91
Publication statusPublished - Mar 1998
Externally publishedYes

Fingerprint

Electron energy loss spectroscopy
scattering cross sections
energy dissipation
Scattering
electron energy
Heating
Molecules
heating
high resolution
spectroscopy
molecules
Temperature
temperature

Keywords

  • Charge transfer
  • Electron energy loss spectroscopy
  • Fullerenes
  • Silicon
  • Silicon carbide
  • Surface phonon

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Spectroscopy
  • Atomic and Molecular Physics, and Optics
  • Surfaces and Interfaces

Cite this

Sakamoto, K., Harada, M., Ashima, H., Suzuki, T., Wakita, T., Kasuya, A., & Suto, S. (1998). SiC islands grown on Si(111)-(7 × 7) and Si(001)-(2 × 1) surfaces by C60 precursor. Journal of Electron Spectroscopy and Related Phenomena, 88-91, 897-903.

SiC islands grown on Si(111)-(7 × 7) and Si(001)-(2 × 1) surfaces by C60 precursor. / Sakamoto, K.; Harada, M.; Ashima, H.; Suzuki, T.; Wakita, Takanori; Kasuya, A.; Suto, S.

In: Journal of Electron Spectroscopy and Related Phenomena, Vol. 88-91, 03.1998, p. 897-903.

Research output: Contribution to journalArticle

Sakamoto, K, Harada, M, Ashima, H, Suzuki, T, Wakita, T, Kasuya, A & Suto, S 1998, 'SiC islands grown on Si(111)-(7 × 7) and Si(001)-(2 × 1) surfaces by C60 precursor', Journal of Electron Spectroscopy and Related Phenomena, vol. 88-91, pp. 897-903.
Sakamoto, K. ; Harada, M. ; Ashima, H. ; Suzuki, T. ; Wakita, Takanori ; Kasuya, A. ; Suto, S. / SiC islands grown on Si(111)-(7 × 7) and Si(001)-(2 × 1) surfaces by C60 precursor. In: Journal of Electron Spectroscopy and Related Phenomena. 1998 ; Vol. 88-91. pp. 897-903.
@article{24273887da4a454b93c9159682755ac9,
title = "SiC islands grown on Si(111)-(7 × 7) and Si(001)-(2 × 1) surfaces by C60 precursor",
abstract = "We have investigated the formation processes and characteristics of SiC islands grown on the Si(111)-(7 × 7) and Si(001)-(2 × 1) surfaces by C60 precursor using high resolution electron energy loss spectroscopy (HREELS). The SiC islands are prepared by heating the C60 adsorbed Si surfaces and confirmed by the observation of the optical surface phonon, Fucks-Kliewer mode. We found that SiC islands are formed at 1170 K and 1120 K on the Si(111)-(7 × 7) and Si(001)-(2 × 1) surfaces, respectively. We attribute the difference in the formation temperature to the different amount of charge which is transferred from Si surface to C60 molecule at 500 K. The difference in the scattering cross-section of the Fucks-Kliewer mode indicates the different shape of SiC islands on each surface.",
keywords = "Charge transfer, Electron energy loss spectroscopy, Fullerenes, Silicon, Silicon carbide, Surface phonon",
author = "K. Sakamoto and M. Harada and H. Ashima and T. Suzuki and Takanori Wakita and A. Kasuya and S. Suto",
year = "1998",
month = "3",
language = "English",
volume = "88-91",
pages = "897--903",
journal = "Journal of Electron Spectroscopy and Related Phenomena",
issn = "0368-2048",
publisher = "Elsevier",

}

TY - JOUR

T1 - SiC islands grown on Si(111)-(7 × 7) and Si(001)-(2 × 1) surfaces by C60 precursor

AU - Sakamoto, K.

AU - Harada, M.

AU - Ashima, H.

AU - Suzuki, T.

AU - Wakita, Takanori

AU - Kasuya, A.

AU - Suto, S.

PY - 1998/3

Y1 - 1998/3

N2 - We have investigated the formation processes and characteristics of SiC islands grown on the Si(111)-(7 × 7) and Si(001)-(2 × 1) surfaces by C60 precursor using high resolution electron energy loss spectroscopy (HREELS). The SiC islands are prepared by heating the C60 adsorbed Si surfaces and confirmed by the observation of the optical surface phonon, Fucks-Kliewer mode. We found that SiC islands are formed at 1170 K and 1120 K on the Si(111)-(7 × 7) and Si(001)-(2 × 1) surfaces, respectively. We attribute the difference in the formation temperature to the different amount of charge which is transferred from Si surface to C60 molecule at 500 K. The difference in the scattering cross-section of the Fucks-Kliewer mode indicates the different shape of SiC islands on each surface.

AB - We have investigated the formation processes and characteristics of SiC islands grown on the Si(111)-(7 × 7) and Si(001)-(2 × 1) surfaces by C60 precursor using high resolution electron energy loss spectroscopy (HREELS). The SiC islands are prepared by heating the C60 adsorbed Si surfaces and confirmed by the observation of the optical surface phonon, Fucks-Kliewer mode. We found that SiC islands are formed at 1170 K and 1120 K on the Si(111)-(7 × 7) and Si(001)-(2 × 1) surfaces, respectively. We attribute the difference in the formation temperature to the different amount of charge which is transferred from Si surface to C60 molecule at 500 K. The difference in the scattering cross-section of the Fucks-Kliewer mode indicates the different shape of SiC islands on each surface.

KW - Charge transfer

KW - Electron energy loss spectroscopy

KW - Fullerenes

KW - Silicon

KW - Silicon carbide

KW - Surface phonon

UR - http://www.scopus.com/inward/record.url?scp=17744418053&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17744418053&partnerID=8YFLogxK

M3 - Article

VL - 88-91

SP - 897

EP - 903

JO - Journal of Electron Spectroscopy and Related Phenomena

JF - Journal of Electron Spectroscopy and Related Phenomena

SN - 0368-2048

ER -