Si single-electron transistors with high voltage gain

Y. Ono, K. Yamazaki, Y. Takahashi

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24 Citations (Scopus)

Abstract

Si single-electron transistors with a high voltage gain at a considerably high temperature have been fabricated by vertical pattern-dependent oxidation. The method enables the automatic formation of very small tunnel junctions having capacitances of less than 1 aF. In addition, the use of a thin (a few ten nanometers thick) gate oxide allows a strong coupling of the island to the gate, which results in a gate capacitance larger than the junction capacitances. It is demonstrated at 27 K that an inverting voltage gain, which is governed by the ratio of the gate capacitance to the drain tunnel capacitance, exceeds 3 under constant drain current conditions.

Original languageEnglish
Pages (from-to)1061-1065
Number of pages5
JournalIEICE Transactions on Electronics
VolumeE84-C
Issue number8
Publication statusPublished - Aug 2001
Externally publishedYes

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Keywords

  • Quantum device
  • Silicon on insulator
  • Single-electron transistor

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Ono, Y., Yamazaki, K., & Takahashi, Y. (2001). Si single-electron transistors with high voltage gain. IEICE Transactions on Electronics, E84-C(8), 1061-1065.