Si single-electron devices with integrated Si islands: Towards ultralow-power electronics

Akira Fujiwara, Yasuo Takahashi, Kenji Yamazaki, Katsumi Murase

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Abstract

Si single-electron devices with multiple Si islands integrated by design have been fabricated. Current switching was performed using the principle of the Coulomb blockade at two closely packed Si islands which were as small as several tens of nanometers. Capacitive coupling between the two islands was also demonstrated, which opens up the possibility of ultralow-power integrated circuits that manipulate electrons individually.

Original languageEnglish
Pages (from-to)114-118
Number of pages5
JournalNTT Review
Volume10
Issue number6
Publication statusPublished - Nov 1998
Externally publishedYes

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Networks and Communications

Cite this

Fujiwara, A., Takahashi, Y., Yamazaki, K., & Murase, K. (1998). Si single-electron devices with integrated Si islands: Towards ultralow-power electronics. NTT Review, 10(6), 114-118.