Si single-electron devices with multiple Si islands integrated by design have been fabricated. Current switching was performed using the principle of the Coulomb blockade at two closely packed Si islands which were as small as several tens of nanometers. Capacitive coupling between the two islands was also demonstrated, which opens up the possibility of ultralow-power integrated circuits that manipulate electrons individually.
|Number of pages||5|
|Publication status||Published - Nov 1 1998|
ASJC Scopus subject areas
- Computer Networks and Communications
- Electrical and Electronic Engineering