Si single-electron CCD

A. Fujiwara; K. Yamazaki; Y. Takahashi

doi:10.1109/IMNC.2001.984197

Si single-electron CCD

A. Fujiwara, K. Yamazaki, Y. Takahashi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A charge-coupled device (CCD) that can manipulate single electrons (holes) was fabricated and found to operate successfully. We demonstrated that the fabricated device can transfer a single hole and also detect its position by a novel charge sensing method based on the electron-hole system in a Si quantum wire. This was the first demonstration of manipulating an elementary charge in Si.

Original language	English
Title of host publication	2001 International Microprocesses and Nanotechnology Conference, MNC 2001
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	278-279
Number of pages	2
ISBN (Print)	4891140178, 9784891140175
DOIs	https://doi.org/10.1109/IMNC.2001.984197
Publication status	Published - 2001
Externally published	Yes
Event	International Microprocesses and Nanotechnology Conference, MNC 2001 - Shimane, Japan Duration: Oct 31 2001 → Nov 2 2001

Other

Other	International Microprocesses and Nanotechnology Conference, MNC 2001
Country	Japan
City	Shimane
Period	10/31/01 → 11/2/01

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ASJC Scopus subject areas

Biotechnology
Fluid Flow and Transfer Processes
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Instrumentation

Cite this

Fujiwara, A., Yamazaki, K., & Takahashi, Y. (2001). Si single-electron CCD. In 2001 International Microprocesses and Nanotechnology Conference, MNC 2001 (pp. 278-279). [984197] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2001.984197

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AU - Takahashi, Y.

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AB - A charge-coupled device (CCD) that can manipulate single electrons (holes) was fabricated and found to operate successfully. We demonstrated that the fabricated device can transfer a single hole and also detect its position by a novel charge sensing method based on the electron-hole system in a Si quantum wire. This was the first demonstration of manipulating an elementary charge in Si.

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M3 - Conference contribution

AN - SCOPUS:84960455853

SN - 4891140178

SN - 9784891140175

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BT - 2001 International Microprocesses and Nanotechnology Conference, MNC 2001

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T2 - International Microprocesses and Nanotechnology Conference, MNC 2001

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ER -

Access to Document

10.1109/IMNC.2001.984197