Si single-electron CCD

A. Fujiwara, K. Yamazaki, Y. Takahashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A charge-coupled device (CCD) that can manipulate single electrons (holes) was fabricated and found to operate successfully. We demonstrated that the fabricated device can transfer a single hole and also detect its position by a novel charge sensing method based on the electron-hole system in a Si quantum wire. This was the first demonstration of manipulating an elementary charge in Si.

Original languageEnglish
Title of host publication2001 International Microprocesses and Nanotechnology Conference, MNC 2001
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages278-279
Number of pages2
ISBN (Print)4891140178, 9784891140175
DOIs
Publication statusPublished - 2001
Externally publishedYes
EventInternational Microprocesses and Nanotechnology Conference, MNC 2001 - Shimane, Japan
Duration: Oct 31 2001Nov 2 2001

Other

OtherInternational Microprocesses and Nanotechnology Conference, MNC 2001
CountryJapan
CityShimane
Period10/31/0111/2/01

Fingerprint

Charge coupled devices
charge coupled devices
Electrons
Equipment and Supplies
Semiconductor quantum wires
electrons
Demonstrations
quantum wires

ASJC Scopus subject areas

  • Biotechnology
  • Fluid Flow and Transfer Processes
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

Cite this

Fujiwara, A., Yamazaki, K., & Takahashi, Y. (2001). Si single-electron CCD. In 2001 International Microprocesses and Nanotechnology Conference, MNC 2001 (pp. 278-279). [984197] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2001.984197

Si single-electron CCD. / Fujiwara, A.; Yamazaki, K.; Takahashi, Y.

2001 International Microprocesses and Nanotechnology Conference, MNC 2001. Institute of Electrical and Electronics Engineers Inc., 2001. p. 278-279 984197.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fujiwara, A, Yamazaki, K & Takahashi, Y 2001, Si single-electron CCD. in 2001 International Microprocesses and Nanotechnology Conference, MNC 2001., 984197, Institute of Electrical and Electronics Engineers Inc., pp. 278-279, International Microprocesses and Nanotechnology Conference, MNC 2001, Shimane, Japan, 10/31/01. https://doi.org/10.1109/IMNC.2001.984197
Fujiwara A, Yamazaki K, Takahashi Y. Si single-electron CCD. In 2001 International Microprocesses and Nanotechnology Conference, MNC 2001. Institute of Electrical and Electronics Engineers Inc. 2001. p. 278-279. 984197 https://doi.org/10.1109/IMNC.2001.984197
Fujiwara, A. ; Yamazaki, K. ; Takahashi, Y. / Si single-electron CCD. 2001 International Microprocesses and Nanotechnology Conference, MNC 2001. Institute of Electrical and Electronics Engineers Inc., 2001. pp. 278-279
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