Abstract
A charge-coupled device (CCD) that can manipulate single electrons (holes) was fabricated and found to operate successfully. We demonstrated that the fabricated device can transfer a single hole and also detect its position by a novel charge sensing method based on the electron-hole system in a Si quantum wire. This was the first demonstration of manipulating an elementary charge in Si.
| Original language | English |
|---|---|
| Title of host publication | 2001 International Microprocesses and Nanotechnology Conference, MNC 2001 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 278-279 |
| Number of pages | 2 |
| ISBN (Print) | 4891140178, 9784891140175 |
| DOIs | |
| Publication status | Published - 2001 |
| Externally published | Yes |
| Event | International Microprocesses and Nanotechnology Conference, MNC 2001 - Shimane, Japan Duration: Oct 31 2001 → Nov 2 2001 |
Other
| Other | International Microprocesses and Nanotechnology Conference, MNC 2001 |
|---|---|
| Country | Japan |
| City | Shimane |
| Period | 10/31/01 → 11/2/01 |
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ASJC Scopus subject areas
- Biotechnology
- Fluid Flow and Transfer Processes
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Instrumentation
Cite this
Si single-electron CCD. / Fujiwara, A.; Yamazaki, K.; Takahashi, Y.
2001 International Microprocesses and Nanotechnology Conference, MNC 2001. Institute of Electrical and Electronics Engineers Inc., 2001. p. 278-279 984197.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Si single-electron CCD
AU - Fujiwara, A.
AU - Yamazaki, K.
AU - Takahashi, Y.
PY - 2001
Y1 - 2001
N2 - A charge-coupled device (CCD) that can manipulate single electrons (holes) was fabricated and found to operate successfully. We demonstrated that the fabricated device can transfer a single hole and also detect its position by a novel charge sensing method based on the electron-hole system in a Si quantum wire. This was the first demonstration of manipulating an elementary charge in Si.
AB - A charge-coupled device (CCD) that can manipulate single electrons (holes) was fabricated and found to operate successfully. We demonstrated that the fabricated device can transfer a single hole and also detect its position by a novel charge sensing method based on the electron-hole system in a Si quantum wire. This was the first demonstration of manipulating an elementary charge in Si.
UR - http://www.scopus.com/inward/record.url?scp=84960455853&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84960455853&partnerID=8YFLogxK
U2 - 10.1109/IMNC.2001.984197
DO - 10.1109/IMNC.2001.984197
M3 - Conference contribution
AN - SCOPUS:84960455853
SN - 4891140178
SN - 9784891140175
SP - 278
EP - 279
BT - 2001 International Microprocesses and Nanotechnology Conference, MNC 2001
PB - Institute of Electrical and Electronics Engineers Inc.
ER -