Si nanostructures formed by pattern-dependent oxidation

M. Nagase, A. Fujiwara, K. Yamazaki, Y. Takahashi, K. Murase, K. Kurihara

Research output: Contribution to journalArticle

43 Citations (Scopus)

Abstract

A quantitative evaluation of the local Si thickness of oxidized Si nanostructures was performed by scanning probe microscopy. Suppression of oxidation by mechanical stress is a dominant factor in determining the shape of Si structures of widths <100 nm. Oxidation from below caused by oxygen diffusion in the buried oxide layer extends to a few hundred nanometers from the pattern edge. The vertical position of the Si structure can be changed within a few tens of nanometers by oxidation from below. As a result of co-occurence of these two phenomena, the local thickness of the patterned Si layer can be controlled within a range of 0-300% of the unpattemed area thickness.

Original languageEnglish
Pages (from-to)527-530
Number of pages4
JournalMicroelectronic Engineering
Volume41-42
DOIs
Publication statusPublished - Jan 1 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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    Nagase, M., Fujiwara, A., Yamazaki, K., Takahashi, Y., Murase, K., & Kurihara, K. (1998). Si nanostructures formed by pattern-dependent oxidation. Microelectronic Engineering, 41-42, 527-530. https://doi.org/10.1016/S0167-9317(98)00123-3