Abstract
A novel Si memory device is proposed, and its fundamental characteristics are demonstrated. The device uses a MOSFET as a gateway for electrons transported to and from the memory island. The stored electrons are detected by a highly sensitive single-electron transistor. The device features ultra-low-power and high-speed operation.
| Original language | English |
|---|---|
| Pages (from-to) | 45-46 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 34 |
| Issue number | 1 |
| Publication status | Published - Jan 8 1998 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Si memory device operated with a small number of electrons by using a single-electron-transistor detector. / Takahashi, Y.; Fujiwara, A.; Yamazaki, K.; Namatsu, H.; Kurihara, K.; Murase, K.
In: Electronics Letters, Vol. 34, No. 1, 08.01.1998, p. 45-46.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Si memory device operated with a small number of electrons by using a single-electron-transistor detector
AU - Takahashi, Y.
AU - Fujiwara, A.
AU - Yamazaki, K.
AU - Namatsu, H.
AU - Kurihara, K.
AU - Murase, K.
PY - 1998/1/8
Y1 - 1998/1/8
N2 - A novel Si memory device is proposed, and its fundamental characteristics are demonstrated. The device uses a MOSFET as a gateway for electrons transported to and from the memory island. The stored electrons are detected by a highly sensitive single-electron transistor. The device features ultra-low-power and high-speed operation.
AB - A novel Si memory device is proposed, and its fundamental characteristics are demonstrated. The device uses a MOSFET as a gateway for electrons transported to and from the memory island. The stored electrons are detected by a highly sensitive single-electron transistor. The device features ultra-low-power and high-speed operation.
UR - http://www.scopus.com/inward/record.url?scp=0032495434&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0032495434&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0032495434
VL - 34
SP - 45
EP - 46
JO - Electronics Letters
JF - Electronics Letters
SN - 0013-5194
IS - 1
ER -