Si memory device operated with a small number of electrons by using a single-electron-transistor detector

Y. Takahashi, A. Fujiwara, K. Yamazaki, H. Namatsu, K. Kurihara, K. Murase

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

A novel Si memory device is proposed, and its fundamental characteristics are demonstrated. The device uses a MOSFET as a gateway for electrons transported to and from the memory island. The stored electrons are detected by a highly sensitive single-electron transistor. The device features ultra-low-power and high-speed operation.

Original languageEnglish
Pages (from-to)45-46
Number of pages2
JournalElectronics Letters
Volume34
Issue number1
Publication statusPublished - Jan 8 1998
Externally publishedYes

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Single electron transistors
Detectors
Data storage equipment
Electrons

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Takahashi, Y., Fujiwara, A., Yamazaki, K., Namatsu, H., Kurihara, K., & Murase, K. (1998). Si memory device operated with a small number of electrons by using a single-electron-transistor detector. Electronics Letters, 34(1), 45-46.

Si memory device operated with a small number of electrons by using a single-electron-transistor detector. / Takahashi, Y.; Fujiwara, A.; Yamazaki, K.; Namatsu, H.; Kurihara, K.; Murase, K.

In: Electronics Letters, Vol. 34, No. 1, 08.01.1998, p. 45-46.

Research output: Contribution to journalArticle

Takahashi, Y, Fujiwara, A, Yamazaki, K, Namatsu, H, Kurihara, K & Murase, K 1998, 'Si memory device operated with a small number of electrons by using a single-electron-transistor detector', Electronics Letters, vol. 34, no. 1, pp. 45-46.
Takahashi Y, Fujiwara A, Yamazaki K, Namatsu H, Kurihara K, Murase K. Si memory device operated with a small number of electrons by using a single-electron-transistor detector. Electronics Letters. 1998 Jan 8;34(1):45-46.
Takahashi, Y. ; Fujiwara, A. ; Yamazaki, K. ; Namatsu, H. ; Kurihara, K. ; Murase, K. / Si memory device operated with a small number of electrons by using a single-electron-transistor detector. In: Electronics Letters. 1998 ; Vol. 34, No. 1. pp. 45-46.
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