Abstract
A novel Si memory device is proposed, and its fundamental characteristics are demonstrated. The device uses a MOSFET as a gateway for electrons transported to and from the memory island. The stored electrons are detected by a highly sensitive single-electron transistor. The device features ultra-low-power and high-speed operation.
| Original language | English |
|---|---|
| Pages (from-to) | 45-46 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 34 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Jan 8 1998 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
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Takahashi, Y., Fujiwara, A., Yamazaki, K., Namatsu, H., Kurihara, K., & Murase, K. (1998). Si memory device operated with a small number of electrons by using a single-electron-transistor detector. Electronics Letters, 34(1), 45-46. https://doi.org/10.1049/el:19980087