Si memory device operated with a small number of electrons by using a single-electron-transistor detector

Y. Takahashi; A. Fujiwara; K. Yamazaki; H. Namatsu; K. Kurihara; K. Murase

doi:10.1049/el:19980087

Si memory device operated with a small number of electrons by using a single-electron-transistor detector

Y. Takahashi, A. Fujiwara, K. Yamazaki, H. Namatsu, K. Kurihara, K. Murase

Faculty of Engineering

Research output: Contribution to journal › Article

7 Citations (Scopus)

Abstract

A novel Si memory device is proposed, and its fundamental characteristics are demonstrated. The device uses a MOSFET as a gateway for electrons transported to and from the memory island. The stored electrons are detected by a highly sensitive single-electron transistor. The device features ultra-low-power and high-speed operation.

Original language	English
Pages (from-to)	45-46
Number of pages	2
Journal	Electronics Letters
Volume	34
Issue number	1
DOIs	https://doi.org/10.1049/el:19980087
Publication status	Published - Jan 8 1998

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ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

Takahashi, Y., Fujiwara, A., Yamazaki, K., Namatsu, H., Kurihara, K., & Murase, K. (1998). Si memory device operated with a small number of electrons by using a single-electron-transistor detector. Electronics Letters, 34(1), 45-46. https://doi.org/10.1049/el:19980087

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Access to Document

10.1049/el:19980087