Abstract
A novel Si memory device is proposed, and its fundamental characteristics are demonstrated. The device uses a MOSFET as a gateway for electrons transported to and from the memory island. The stored electrons are detected by a highly sensitive single-electron transistor. The device features ultra-low-power and high-speed operation.
Original language | English |
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Pages (from-to) | 45-46 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 34 |
Issue number | 1 |
DOIs | |
Publication status | Published - Jan 8 1998 |
Externally published | Yes |
ASJC Scopus subject areas
- Electrical and Electronic Engineering