Si memory device operated with a small number of electrons by using a single-electron-transistor detector

Y. Takahashi; A. Fujiwara; K. Yamazaki; H. Namatsu; K. Kurihara; K. Murase

doi:10.1049/el:19980087

Si memory device operated with a small number of electrons by using a single-electron-transistor detector

Y. Takahashi, A. Fujiwara, K. Yamazaki, H. Namatsu, K. Kurihara, K. Murase

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

A novel Si memory device is proposed, and its fundamental characteristics are demonstrated. The device uses a MOSFET as a gateway for electrons transported to and from the memory island. The stored electrons are detected by a highly sensitive single-electron transistor. The device features ultra-low-power and high-speed operation.

Original language	English
Pages (from-to)	45-46
Number of pages	2
Journal	Electronics Letters
Volume	34
Issue number	1
DOIs	https://doi.org/10.1049/el:19980087
Publication status	Published - Jan 8 1998
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19980087

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abstract = "A novel Si memory device is proposed, and its fundamental characteristics are demonstrated. The device uses a MOSFET as a gateway for electrons transported to and from the memory island. The stored electrons are detected by a highly sensitive single-electron transistor. The device features ultra-low-power and high-speed operation.",

author = "Y. Takahashi and A. Fujiwara and K. Yamazaki and H. Namatsu and K. Kurihara and K. Murase",

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AU - Takahashi, Y.

AU - Fujiwara, A.

AU - Yamazaki, K.

AU - Namatsu, H.

AU - Kurihara, K.

AU - Murase, K.

PY - 1998/1/8

Y1 - 1998/1/8

N2 - A novel Si memory device is proposed, and its fundamental characteristics are demonstrated. The device uses a MOSFET as a gateway for electrons transported to and from the memory island. The stored electrons are detected by a highly sensitive single-electron transistor. The device features ultra-low-power and high-speed operation.

AB - A novel Si memory device is proposed, and its fundamental characteristics are demonstrated. The device uses a MOSFET as a gateway for electrons transported to and from the memory island. The stored electrons are detected by a highly sensitive single-electron transistor. The device features ultra-low-power and high-speed operation.

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Si memory device operated with a small number of electrons by using a single-electron-transistor detector

Abstract

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