Si complementary single-electron inverter with voltage gain

Yukinori Ono, Yasuo Takahashi, Kenji Yamazaki, Masao Nagase, Hideo Namatsu, Kenji Kurihara, Katsumi Murase

Research output: Contribution to journalArticle

88 Citations (Scopus)

Abstract

A Si complementary single-electron inverter in which two identical single-electron transistors (SETs) are packed is fabricated on a silicon-on-insulator substrate. For the fabrication, the vertical pattern-dependent oxidation method, which enables the formation of two tiny SETs aligned in parallel, is modified so that the two SETs can be connected in series to realize an inverter configuration. The resultant circuit occupies a very small area: 100 X 100 nm for each SET. For complementary operation, the electrical characteristics of one of the SETs are shifted using a side gate situated near the SET. Input-output transfer with a voltage gain larger than unity is demonstrated at 27 K.

Original languageEnglish
Pages (from-to)3121-3123
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number21
Publication statusPublished - May 22 2000
Externally publishedYes

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single electron transistors
electric potential
electrons
unity
insulators
oxidation
fabrication
output
silicon
configurations

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Ono, Y., Takahashi, Y., Yamazaki, K., Nagase, M., Namatsu, H., Kurihara, K., & Murase, K. (2000). Si complementary single-electron inverter with voltage gain. Applied Physics Letters, 76(21), 3121-3123.

Si complementary single-electron inverter with voltage gain. / Ono, Yukinori; Takahashi, Yasuo; Yamazaki, Kenji; Nagase, Masao; Namatsu, Hideo; Kurihara, Kenji; Murase, Katsumi.

In: Applied Physics Letters, Vol. 76, No. 21, 22.05.2000, p. 3121-3123.

Research output: Contribution to journalArticle

Ono, Y, Takahashi, Y, Yamazaki, K, Nagase, M, Namatsu, H, Kurihara, K & Murase, K 2000, 'Si complementary single-electron inverter with voltage gain', Applied Physics Letters, vol. 76, no. 21, pp. 3121-3123.
Ono Y, Takahashi Y, Yamazaki K, Nagase M, Namatsu H, Kurihara K et al. Si complementary single-electron inverter with voltage gain. Applied Physics Letters. 2000 May 22;76(21):3121-3123.
Ono, Yukinori ; Takahashi, Yasuo ; Yamazaki, Kenji ; Nagase, Masao ; Namatsu, Hideo ; Kurihara, Kenji ; Murase, Katsumi. / Si complementary single-electron inverter with voltage gain. In: Applied Physics Letters. 2000 ; Vol. 76, No. 21. pp. 3121-3123.
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