Si complementary single-electron inverter

Yukinori Ono, Yasuo Takahashi, Kenji Yamazaki, Masao Nagase, Hideo Namatsu, Kenji Kurihara, Katsumi Murase

Research output: Contribution to journalConference article

26 Citations (Scopus)

Abstract

A complementary single-electron inverter occupying an extremely small area is fabricated on an SOI substrate. For the fabrication, the vertical pattern-dependent oxidation method, which enables the formation of two tiny single-electron transistors (SETs) aligned in parallel, is advanced so that the two SETs are connected in series to realize an inverter configuration. By controlling peak positions of the conductance curve of the SETs in the inverter using the side gates situated near each SET, input-output transfer with a gain larger than unity is demonstrated at 27 K.

Original languageEnglish
Pages (from-to)367-370
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - Dec 1 1999
Event1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA
Duration: Dec 5 1999Dec 8 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Ono, Y., Takahashi, Y., Yamazaki, K., Nagase, M., Namatsu, H., Kurihara, K., & Murase, K. (1999). Si complementary single-electron inverter. Technical Digest - International Electron Devices Meeting, 367-370.