Si complementary single-electron inverter

Yukinori Ono, Yasuo Takahashi, Kenji Yamazaki, Masao Nagase, Hideo Namatsu, Kenji Kurihara, Katsumi Murase

Research output: Chapter in Book/Report/Conference proceedingConference contribution

26 Citations (Scopus)

Abstract

A complementary single-electron inverter occupying an extremely small area is fabricated on an SOI substrate. For the fabrication, the vertical pattern-dependent oxidation method, which enables the formation of two tiny single-electron transistors (SETs) aligned in parallel, is advanced so that the two SETs are connected in series to realize an inverter configuration. By controlling peak positions of the conductance curve of the SETs in the inverter using the side gates situated near each SET, input-output transfer with a gain larger than unity is demonstrated at 27 K.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
PublisherIEEE
Pages367-370
Number of pages4
Publication statusPublished - 1999
Externally publishedYes
Event1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA
Duration: Dec 5 1999Dec 8 1999

Other

Other1999 IEEE International Devices Meeting (IEDM)
CityWashington, DC, USA
Period12/5/9912/8/99

Fingerprint

Single electron transistors
Electrons
Gates (transistor)
Fabrication
Oxidation
Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Ono, Y., Takahashi, Y., Yamazaki, K., Nagase, M., Namatsu, H., Kurihara, K., & Murase, K. (1999). Si complementary single-electron inverter. In Technical Digest - International Electron Devices Meeting (pp. 367-370). IEEE.

Si complementary single-electron inverter. / Ono, Yukinori; Takahashi, Yasuo; Yamazaki, Kenji; Nagase, Masao; Namatsu, Hideo; Kurihara, Kenji; Murase, Katsumi.

Technical Digest - International Electron Devices Meeting. IEEE, 1999. p. 367-370.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ono, Y, Takahashi, Y, Yamazaki, K, Nagase, M, Namatsu, H, Kurihara, K & Murase, K 1999, Si complementary single-electron inverter. in Technical Digest - International Electron Devices Meeting. IEEE, pp. 367-370, 1999 IEEE International Devices Meeting (IEDM), Washington, DC, USA, 12/5/99.
Ono Y, Takahashi Y, Yamazaki K, Nagase M, Namatsu H, Kurihara K et al. Si complementary single-electron inverter. In Technical Digest - International Electron Devices Meeting. IEEE. 1999. p. 367-370
Ono, Yukinori ; Takahashi, Yasuo ; Yamazaki, Kenji ; Nagase, Masao ; Namatsu, Hideo ; Kurihara, Kenji ; Murase, Katsumi. / Si complementary single-electron inverter. Technical Digest - International Electron Devices Meeting. IEEE, 1999. pp. 367-370
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