TY - JOUR
T1 - Semiconductor diamond heater in the Kawai multianvil apparatus
T2 - An innovation to generate the lower mantle geotherm
AU - Yoneda, Akira
AU - Xie, Longjian
AU - Tsujino, Noriyoshi
AU - Ito, Eiji
N1 - Funding Information:
LX was an internship student of MISIP2013 hosted by ISEI, Okayama University. We thank Mr. Nishihara and Mr. Tsunemi for their kind cooperation and advice in making the machinable boron-doped graphite block. This research project was assisted by critical discussions with D. Yamazaki and T. Yoshino and technical assistance from Ms. C. Oka. This work was supported by a Grant-in-Aid for Scientific Research (Grant No. 22224008 to AY) from the Japan Society for the Promotion of Science.
Publisher Copyright:
© 2014 Taylor & Francis.
PY - 2014/10/2
Y1 - 2014/10/2
N2 - Semiconductor diamond is considered the best heater material to generate ultra-high temperatures in a Kawai cell. In two pioneering studies, a mixture of graphite and amorphous boron (or boron carbide, B4C) was converted to semiconductor diamond in the diamond stability field and was confirmed to generate 2000°C and 3500°C, respectively. Following these works, we synthesized a homemade boron-doped graphite block with fine machinability. With this technical breakthrough, we developed a semiconductor diamond heater in a smaller Kawai-type cell assembly. Here, we report the procedure for making machinable boron-doped graphite, and the performance of the material as a heater in a Kawai cell at 15GPa using tungsten carbide anvils and at ∼50GPa using sintered diamond anvils. Furthermore, we present a finite element simulation of the temperature distribution generated by a semiconductor diamond heater, which is much more homogeneous than that generated by a metal heater.
AB - Semiconductor diamond is considered the best heater material to generate ultra-high temperatures in a Kawai cell. In two pioneering studies, a mixture of graphite and amorphous boron (or boron carbide, B4C) was converted to semiconductor diamond in the diamond stability field and was confirmed to generate 2000°C and 3500°C, respectively. Following these works, we synthesized a homemade boron-doped graphite block with fine machinability. With this technical breakthrough, we developed a semiconductor diamond heater in a smaller Kawai-type cell assembly. Here, we report the procedure for making machinable boron-doped graphite, and the performance of the material as a heater in a Kawai cell at 15GPa using tungsten carbide anvils and at ∼50GPa using sintered diamond anvils. Furthermore, we present a finite element simulation of the temperature distribution generated by a semiconductor diamond heater, which is much more homogeneous than that generated by a metal heater.
KW - Kawai cell
KW - boron-doped diamond
KW - finite element method
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U2 - 10.1080/08957959.2014.969255
DO - 10.1080/08957959.2014.969255
M3 - Article
AN - SCOPUS:84919460949
SN - 0895-7959
VL - 34
SP - 392
EP - 403
JO - High Pressure Research
JF - High Pressure Research
IS - 4
ER -