Scanning tunneling microscopy of Dy@C82 and Dy@C60 adsorbed on Si(111)-(7×7) surfaces

Satoshi Fujiki, Yoshihiro Kubozono, Tomoko Hosokawa, Takayoshi Kanbara, Akihiko Fujiwara, Youichi Nonogaki, Tsuneo Urisu

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11 Citations (Scopus)

Abstract

Dy@C82 and Dy@C60 adsorbed on Si(111)-(7 × 7) surface are investigated by scanning tunneling microscopy (STM) at 295 K. The Dy@C82 molecules in the first layer are adsorbed on the Si(111)-(7 × 7) surface without formation of islands and nucleation, and the internal structure of the Dy@C82 molecule is first observed on the surface at 295 K. The average heights of the Dy@C82 molecules in the first and second layers are estimated to be 7.2 and 10.8 Å, respectively, by STM. These results suggest strong interactions between the Si atoms and the Dy@C82 molecules in the first layer. The STM image reveals that the Dy@C60 molecule is nearly spherical, showing that the metal endohedral C60 possesses a cage-form structure.

Original languageEnglish
Article number045415
Pages (from-to)454151-454155
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume69
Issue number4
Publication statusPublished - Jan 1 2004

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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