Scanning tunneling microscopy of Dy@C82 and Dy@C60 adsorbed on Si(111) − (7×7)

Satoshi Fujiki, Yoshihiro Kubozono, Tomoko Hosokawa, Takayoshi Kanbara, Akihiko Fujiwara, Youichi Nonogaki, Tsuneo Urisu

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Abstract

Dy@C82 and Dy@C60 adsorbed on Si(111)−(7×7) surface are investigated by scanning tunneling microscopy (STM) at 295 K. The Dy@C82 molecules in the first layer are adsorbed on the Si(111)−(7×7) surface without formation of islands and nucleation, and the internal structure of the Dy@C82 molecule is first observed on the surface at 295 K. The average heights of the Dy@C82 molecules in the first and second layers are estimated to be 7.2 and 10.8Å, respectively, by STM. These results suggest strong interactions between the Si atoms and the Dy@C82 molecules in the first layer. The STM image reveals that the Dy@C60 molecule is nearly spherical, showing that the metal endohedral C60 possesses a cage-form structure.

Original languageEnglish
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume69
Issue number4
DOIs
Publication statusPublished - Jan 28 2004

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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