Sb-doping effect on the dislocation motion in various Si1-xGex films

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)75-80
Number of pages6
JournalProc. The Forum on the Sciecne and Technology of Silicon Materials 2014
Publication statusPublished - 2014

Cite this

@article{af56f8f95e534d4db9476e74544e4ef3,
title = "Sb-doping effect on the dislocation motion in various Si1-xGex films",
author = "Yoshifumi Yamashita",
year = "2014",
language = "English",
pages = "75--80",
journal = "Proc. The Forum on the Sciecne and Technology of Silicon Materials 2014",

}

TY - JOUR

T1 - Sb-doping effect on the dislocation motion in various Si1-xGex films

AU - Yamashita, Yoshifumi

PY - 2014

Y1 - 2014

M3 - Article

SP - 75

EP - 80

JO - Proc. The Forum on the Sciecne and Technology of Silicon Materials 2014

JF - Proc. The Forum on the Sciecne and Technology of Silicon Materials 2014

ER -