Sb-doping effect on the dislocation motion in various Si1-xGex films

Takeshi Nishikawa

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)75-80
Number of pages6
JournalProc. The Forum on the Sciecne and Technology of Silicon Materials 2014
Publication statusPublished - 2014
Externally publishedYes

Cite this

Sb-doping effect on the dislocation motion in various Si1-xGex films. / Nishikawa, Takeshi.

In: Proc. The Forum on the Sciecne and Technology of Silicon Materials 2014, 2014, p. 75-80.

Research output: Contribution to journalArticle

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journal = "Proc. The Forum on the Sciecne and Technology of Silicon Materials 2014",

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AU - Nishikawa, Takeshi

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JO - Proc. The Forum on the Sciecne and Technology of Silicon Materials 2014

JF - Proc. The Forum on the Sciecne and Technology of Silicon Materials 2014

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