Room-temperature ferromagnetism of Cu-doped ZnO films deposited by helicon magnetron sputtering

Fan Yong Ran, Masao Imaoka, Masaki Tanemura, Yasuhiko Hayashi, Tun Seng Herng, Shu Ping Lau

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

Wurtzite structure ZnO films doped with 0.5 and 1.7 at% Cu were deposited by helicon magnetron sputtering. The prepared films exhibited room-temperature (RT) ferromagnetism (FM). Maximum RT saturation magnetization of 2 emu/cm3 (~ 0.3μB/Cu) was observed for ZnO film with 1.7 at% Cu. Cu ions were in a bivalent state as identified by X-ray photoelectron spectroscopy (XPS). In photoluminescence spectra, the green emission peak increased and redshifted due to the incorporation of Cu or defects induced by Cu incorporation. Since Cu and Cu-related oxides are not RT ferromagnetic, and no trace of ferromagnetic contamination was detected in XPS results, the observed FM is considered to be an intrinsic property of Cu-doped ZnO films. The FM was thought to originate from defect-related mechanisms.

Original languageEnglish
Pages (from-to)1243-1247
Number of pages5
JournalPhysica Status Solidi (B) Basic Research
Volume246
Issue number6
DOIs
Publication statusPublished - Jun 2009

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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