Room-Temperature CW Operation of AlGaAs/GaAs SQW Lasers on Si Substrates by MOCVD Using AlGaAs/AlGaP Intermediate Layers

Takashi Egawa, Yasufumi Kobayashi, Yasuhiko Hayashi, Tetsuo Soga, Takashi Jimbo, Masayoshi Umeno

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Room-temperature CW operation of all-MOCVD-grown Al0.3Ga0.7As/GaAs SQW lasers on Si substrates with Al0.5Ga0.5As/Al0.55Ga0.45P intermediate layers has been demonstrated for the first time. The averaged threshold current density and differential quantum efficiency of the lasers grown with the Al0.5Ga0.5As/Al0.55Ga0.45P intermediate layers are 2.23 kA/cm2 and 50.3%, respectively, which are superior to those of the lasers grown by the two-step growth technique. The characteristics of the lasers using this technique are more uniform than those grown by the two-step growth technique.

Original languageEnglish
Pages (from-to)L1133-L1135
JournalJapanese Journal of Applied Physics
Volume29
Issue number7
DOIs
Publication statusPublished - Jul 1990
Externally publishedYes

Keywords

  • Aigaas/aigap
  • Cw operation
  • Gaas/si
  • Laser
  • Mocvd
  • Photoluminescence
  • Quantum well
  • Tem

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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