Role of cyclic process in the initial stage of diamond deposition during bias enhanced nucleation

Y. Hayashi, Y. Matsushita, T. Soga, M. Umeno, T. Jimbo

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The initial nucleation of diamond film on a Si substrate, deposited by a three-step growth process together with a cycle bias enhanced nucleation (BEN) growth/H 2 plasma etching technique in a microwave plasma enhanced chemical vapor deposition system has been investigated by atomic force microscopy, Raman spectroscopy and x-ray photoelectron spectroscopy. The surface morphology and the uniformity of 100-oriented textured grains at the BEN step were found to be greatly increased by applying the cyclic process with some optimal H 2 plasma etching time during the BEN stage.

Original languageEnglish
Pages (from-to)9752-9756
Number of pages5
JournalJournal of Applied Physics
Volume91
Issue number12
DOIs
Publication statusPublished - Jun 15 2002
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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