Robust sandwiched fluorinated graphene for highly reliable flexible electronics

Mamina Sahoo, Jer Chyi Wang, Yuta Nishina, Zhiwei Liu, Jong Shing Bow, Chao Sung Lai

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The high sensitivity of graphene to the surface condition of the gate dielectric layer and its poor van der Waals adhesion with a flexible substrate result in interfacial sliding and fracturing of graphene at low strains, making the successful utilization of pristine graphene (PG) in flexible electronics challenging. Here, we report a facile method for the fabrication of flexible graphene field effect transistors (F-GFETs) using sandwiched fluorinated graphene (FG). The “FG-PG-FG” sandwich structure shows a high optical transparency (>94%) with an average carrier mobility above 340 cm2/V·s, higher than that obtained when GO and Ion gel were used as gate dielectric materials on F-GFETs and a relatively low gate leakage current of ~160 pA. Furthermore, we observed a high mechanical stability, retaining >88% of the original current output against bending deformation of up to 6 mm and >77% after 200 bending cycles by applying a tensile strain of 1.56%, compared to the control sample. This improved performance is attributed to the fact that the sandwiched FG provides a good dielectric environment by tuning the C/F ratio, which tightly fixes the PG under strain. These findings provide a new route for the future development of graphene-based flexible electronics.

Original languageEnglish
Article number143839
JournalApplied Surface Science
Volume499
DOIs
Publication statusPublished - Jan 1 2020

Keywords

  • Bending
  • CVD graphene
  • Field effect transistor
  • Flexible and transparent
  • Sandwiched fluorinated graphene
  • Strain

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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