Revisiting the valence-band and core-level photoemission spectra of NiO

M. Taguchi, M. Matsunami, Y. Ishida, Ritsuko Eguchi, A. Chainani, Y. Takata, M. Yabashi, K. Tamasaku, Y. Nishino, T. Ishikawa, Y. Senba, H. Ohashi, S. Shin

Research output: Contribution to journalArticle

56 Citations (Scopus)

Abstract

We have reexamined the valence-band (VB) and core-level electronic structure of NiO by means of hard and soft x-ray photoemission spectroscopies. The spectral weight of the lowest energy state was found to be enhanced in the bulk sensitive Ni 2p core-level spectrum. A configuration-interaction model including a bound state screening has shown agreement with the core-level spectrum and off- and on-resonance VB spectra. These results identify the lowest energy states in the core-level and VB spectra as the Zhang-Rice (ZR) doublet bound states, consistent with the spin-fermion model and recent ab initio calculations within dynamical mean-field theory. The results indicate that the ZR character first ionization (the lowest hole-addition) states are responsible for transport properties in NiO and doped NiO.

Original languageEnglish
Article number206401
JournalPhysical Review Letters
Volume100
Issue number20
DOIs
Publication statusPublished - May 19 2008
Externally publishedYes

Fingerprint

photoelectric emission
valence
rice
configuration interaction
screening
transport properties
fermions
electronic structure
ionization
energy
spectroscopy
x rays

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Taguchi, M., Matsunami, M., Ishida, Y., Eguchi, R., Chainani, A., Takata, Y., ... Shin, S. (2008). Revisiting the valence-band and core-level photoemission spectra of NiO. Physical Review Letters, 100(20), [206401]. https://doi.org/10.1103/PhysRevLett.100.206401

Revisiting the valence-band and core-level photoemission spectra of NiO. / Taguchi, M.; Matsunami, M.; Ishida, Y.; Eguchi, Ritsuko; Chainani, A.; Takata, Y.; Yabashi, M.; Tamasaku, K.; Nishino, Y.; Ishikawa, T.; Senba, Y.; Ohashi, H.; Shin, S.

In: Physical Review Letters, Vol. 100, No. 20, 206401, 19.05.2008.

Research output: Contribution to journalArticle

Taguchi, M, Matsunami, M, Ishida, Y, Eguchi, R, Chainani, A, Takata, Y, Yabashi, M, Tamasaku, K, Nishino, Y, Ishikawa, T, Senba, Y, Ohashi, H & Shin, S 2008, 'Revisiting the valence-band and core-level photoemission spectra of NiO', Physical Review Letters, vol. 100, no. 20, 206401. https://doi.org/10.1103/PhysRevLett.100.206401
Taguchi, M. ; Matsunami, M. ; Ishida, Y. ; Eguchi, Ritsuko ; Chainani, A. ; Takata, Y. ; Yabashi, M. ; Tamasaku, K. ; Nishino, Y. ; Ishikawa, T. ; Senba, Y. ; Ohashi, H. ; Shin, S. / Revisiting the valence-band and core-level photoemission spectra of NiO. In: Physical Review Letters. 2008 ; Vol. 100, No. 20.
@article{aff55aeb36f74587b54a97e98e790041,
title = "Revisiting the valence-band and core-level photoemission spectra of NiO",
abstract = "We have reexamined the valence-band (VB) and core-level electronic structure of NiO by means of hard and soft x-ray photoemission spectroscopies. The spectral weight of the lowest energy state was found to be enhanced in the bulk sensitive Ni 2p core-level spectrum. A configuration-interaction model including a bound state screening has shown agreement with the core-level spectrum and off- and on-resonance VB spectra. These results identify the lowest energy states in the core-level and VB spectra as the Zhang-Rice (ZR) doublet bound states, consistent with the spin-fermion model and recent ab initio calculations within dynamical mean-field theory. The results indicate that the ZR character first ionization (the lowest hole-addition) states are responsible for transport properties in NiO and doped NiO.",
author = "M. Taguchi and M. Matsunami and Y. Ishida and Ritsuko Eguchi and A. Chainani and Y. Takata and M. Yabashi and K. Tamasaku and Y. Nishino and T. Ishikawa and Y. Senba and H. Ohashi and S. Shin",
year = "2008",
month = "5",
day = "19",
doi = "10.1103/PhysRevLett.100.206401",
language = "English",
volume = "100",
journal = "Physical Review Letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "20",

}

TY - JOUR

T1 - Revisiting the valence-band and core-level photoemission spectra of NiO

AU - Taguchi, M.

AU - Matsunami, M.

AU - Ishida, Y.

AU - Eguchi, Ritsuko

AU - Chainani, A.

AU - Takata, Y.

AU - Yabashi, M.

AU - Tamasaku, K.

AU - Nishino, Y.

AU - Ishikawa, T.

AU - Senba, Y.

AU - Ohashi, H.

AU - Shin, S.

PY - 2008/5/19

Y1 - 2008/5/19

N2 - We have reexamined the valence-band (VB) and core-level electronic structure of NiO by means of hard and soft x-ray photoemission spectroscopies. The spectral weight of the lowest energy state was found to be enhanced in the bulk sensitive Ni 2p core-level spectrum. A configuration-interaction model including a bound state screening has shown agreement with the core-level spectrum and off- and on-resonance VB spectra. These results identify the lowest energy states in the core-level and VB spectra as the Zhang-Rice (ZR) doublet bound states, consistent with the spin-fermion model and recent ab initio calculations within dynamical mean-field theory. The results indicate that the ZR character first ionization (the lowest hole-addition) states are responsible for transport properties in NiO and doped NiO.

AB - We have reexamined the valence-band (VB) and core-level electronic structure of NiO by means of hard and soft x-ray photoemission spectroscopies. The spectral weight of the lowest energy state was found to be enhanced in the bulk sensitive Ni 2p core-level spectrum. A configuration-interaction model including a bound state screening has shown agreement with the core-level spectrum and off- and on-resonance VB spectra. These results identify the lowest energy states in the core-level and VB spectra as the Zhang-Rice (ZR) doublet bound states, consistent with the spin-fermion model and recent ab initio calculations within dynamical mean-field theory. The results indicate that the ZR character first ionization (the lowest hole-addition) states are responsible for transport properties in NiO and doped NiO.

UR - http://www.scopus.com/inward/record.url?scp=44149122417&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=44149122417&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.100.206401

DO - 10.1103/PhysRevLett.100.206401

M3 - Article

AN - SCOPUS:44149122417

VL - 100

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 20

M1 - 206401

ER -