TY - JOUR
T1 - Reverse Offset Printing of Semidried Metal Acetylacetonate Layers and Its Application to a Solution-Processed IGZO TFT Fabrication
AU - Kusaka, Yasuyuki
AU - Shirakawa, Naoki
AU - Ogura, Shintaro
AU - Leppäniemi, Jaakko
AU - Sneck, Asko
AU - Alastalo, Ari
AU - Ushijima, Hirobumi
AU - Fukuda, Nobuko
N1 - Funding Information:
The authors gratefully acknowledge the technical assistance of Mariko Fujita. Y.K. expresses thanks for the JSPS KAKENHI Grant-in-Aid for Young Scientists (B) 17K18410 and the Grant-in-Aid for Scientific Research (S) 16H06382. J.L., A.S. and A.A. are supported by the Academy of Finland under Project ROXI Grant No. 305450. XPS and UPS measurements were performed at AIST Nano-Processing Facility (AIST-NPF).
Publisher Copyright:
© 2018 American Chemical Society.
PY - 2018/7/25
Y1 - 2018/7/25
N2 - The submicrometer resolution printing of various metal acetylacetonate complex inks including Fe, V, Mn, Co, Ni, Zn, Zr, Mo, and In was enabled by a robust ink formulation scheme which adopted a ternary solvent system where solubility, surface wettability, and drying as well as absorption behavior on a polydimethylsiloxane sheet were optimized. Hydrogen plasma in heated conditions resulted in bombarded, resistive, or conductive state depending on the temperature and the metal species. With a conductivity-bestowed layer of MoOx and a plasma-protecting layer of ZrOx situated on the top of an IGZO layer, a solution-processed TFT exhibiting an average mobility of 0.17 cm2/(V s) is demonstrated.
AB - The submicrometer resolution printing of various metal acetylacetonate complex inks including Fe, V, Mn, Co, Ni, Zn, Zr, Mo, and In was enabled by a robust ink formulation scheme which adopted a ternary solvent system where solubility, surface wettability, and drying as well as absorption behavior on a polydimethylsiloxane sheet were optimized. Hydrogen plasma in heated conditions resulted in bombarded, resistive, or conductive state depending on the temperature and the metal species. With a conductivity-bestowed layer of MoOx and a plasma-protecting layer of ZrOx situated on the top of an IGZO layer, a solution-processed TFT exhibiting an average mobility of 0.17 cm2/(V s) is demonstrated.
KW - hydrogen plasma
KW - metal complex
KW - metal oxide
KW - Printing
KW - solution process
KW - transistor
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U2 - 10.1021/acsami.8b07465
DO - 10.1021/acsami.8b07465
M3 - Article
C2 - 29972298
AN - SCOPUS:85049670615
SN - 1944-8244
VL - 10
SP - 24339
EP - 24343
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
IS - 29
ER -