Responsivity characteristics of InP/InGaAs heterojunction phototransistor with a strained inas/ingaas multiquantum well absorption layer in the base or collector

Hideki Fukano, Hiroshi Egusa, Shuji Taue, Tomonari Sato, Manabu Mitsuhara

Research output: Contribution to journalArticle

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Abstract

The responsivity characteristics of heterojunction phototransistors (HPTs) with a strained InAs/InGaAs multiquantum well (MQW) absorption layer inserted in the base or collector are investigated. It is shown that although the hetero-emitter injects hot electrons into the base, the effective electron diffusion length in the base with MQWs becomes five times lower than that of a base without MQWs. This results in higher current gain for HPTs with MQWs in the collector. In addition, enhanced absorption coefficient due to excitonic absorption is observed only on HPT with MQW in the collector. Due to these two factors, a high responsivity of more than 10A/W is realized at a wavelength around 2.35 μm for the device with MQWs in the collector.

Original languageEnglish
Article number02BG04
JournalJapanese Journal of Applied Physics
Volume51
Issue number2 PART 2
DOIs
Publication statusPublished - Feb 2012

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Phototransistors
phototransistors
accumulators
Heterojunctions
heterojunctions
Hot electrons
electron diffusion
diffusion length
hot electrons
high current
Wavelength
absorptivity
emitters
Electrons
wavelengths

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Responsivity characteristics of InP/InGaAs heterojunction phototransistor with a strained inas/ingaas multiquantum well absorption layer in the base or collector. / Fukano, Hideki; Egusa, Hiroshi; Taue, Shuji; Sato, Tomonari; Mitsuhara, Manabu.

In: Japanese Journal of Applied Physics, Vol. 51, No. 2 PART 2, 02BG04, 02.2012.

Research output: Contribution to journalArticle

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