Resonant gate driver for normally-on GaN high-electron-mobility transistor

Takaharu Ishibashi, Masayuki Okamoto, Eiji Hiraki, Toshihiko Tanaka, Tamotsu Hashizume, Tetsu Kachi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

Wide bandgap semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), are promised materials for next-generation power devices. The authors have recently fabricated a GaN-based high-electron-mobility transistor (HEMT), which is a normally-on device, for power electronics application. However, the power consumption in the constructed gate drive circuit increases when the GaN HEMT is used under higher-frequency operation. A new gate drive circuit with lower power consumption for the normally-on GaN HEMT is strongly required. In this paper, a new resonant gate drive circuit, which is most suitable for the newly fabricated GaN HEMT, is proposed. The validity and high practicability of the proposed resonant gate drive circuit are demonstrated by simulation and experimental results.

Original languageEnglish
Title of host publication2013 IEEE ECCE Asia Downunder - 5th IEEE Annual International Energy Conversion Congress and Exhibition, IEEE ECCE Asia 2013
Pages365-371
Number of pages7
DOIs
Publication statusPublished - Sep 16 2013
Externally publishedYes
Event2013 IEEE ECCE Asia Downunder - 5th IEEE Annual International Energy Conversion Congress and Exhibition, IEEE ECCE Asia 2013 - Melbourne, VIC, Australia
Duration: Jun 3 2013Jun 6 2013

Publication series

Name2013 IEEE ECCE Asia Downunder - 5th IEEE Annual International Energy Conversion Congress and Exhibition, IEEE ECCE Asia 2013

Other

Other2013 IEEE ECCE Asia Downunder - 5th IEEE Annual International Energy Conversion Congress and Exhibition, IEEE ECCE Asia 2013
CountryAustralia
CityMelbourne, VIC
Period6/3/136/6/13

Keywords

  • HEMT
  • gallium nitride
  • high switching frequency
  • normally-on
  • resonant gate drive

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Ishibashi, T., Okamoto, M., Hiraki, E., Tanaka, T., Hashizume, T., & Kachi, T. (2013). Resonant gate driver for normally-on GaN high-electron-mobility transistor. In 2013 IEEE ECCE Asia Downunder - 5th IEEE Annual International Energy Conversion Congress and Exhibition, IEEE ECCE Asia 2013 (pp. 365-371). [6579122] (2013 IEEE ECCE Asia Downunder - 5th IEEE Annual International Energy Conversion Congress and Exhibition, IEEE ECCE Asia 2013). https://doi.org/10.1109/ECCE-Asia.2013.6579122