Resistive anisotropy of candidate excitonic insulator Ta2NiSe5under pressure

H. Arima, Y. Naito, K. Kudo, N. Katayama, H. Sawa, M. Nohara, Y. F. Lu, K. Kitagawa, H. Takagi, Y. Uwatoko, K. Matsubayashi

Research output: Contribution to journalConference articlepeer-review

Abstract

We have measured anisotropic electrical resistivity of quasi-one-dimensional Ta2NiSe5 single crystals under pressure. While the in-plane anisotropy is almost pressure independent, the inter-plane one greatly decreases at P c ∼ 3 GPa accompanied by a pressure-induced semiconductor-semimetal transition. Nevertheless, a similar anomaly in the temperature dependence of in-plane anisotropy has been observed in each phase. This anomaly in the low-pressure phase below P c is regarded as an excitonic transition, and thus both of these anomalies are suppressed with increasing pressure. These results suggest that the suppression of the excitonic binding energy with pressure is caused by the increase of free carrier densities and the inter-plane conductivity.

Original languageEnglish
Article number012001
JournalJournal of Physics: Conference Series
Volume1609
Issue number1
DOIs
Publication statusPublished - Aug 17 2020
Event27th AIRAPT International Conference on High Pressure Science and Technology - Rio de Janeiro, Brazil
Duration: Aug 4 2019Aug 9 2019

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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