Resist thinning effect on nanometer-scale line-edge roughness

Kenichi Kanzaki; Toru Yamaguchi; Masao Nagase; Kenji Yamazaki; Hideo Namatsu

Resist thinning effect on nanometer-scale line-edge roughness

Kenichi Kanzaki, Toru Yamaguchi, Masao Nagase, Kenji Yamazaki, Hideo Namatsu

Faculty of Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The thickness dependence of the roughness of ultrathin (≤ 100 nm) electron-beam resist (ZEP520) was investigated using an atomic force microscope (AFM). The roughness (linewidth fluctuations of line patterns) increased with decreasing resist thickness, especially below 30 nm. On the other hand, polymer aggregates, which are well observed in conventional resists, existed in compressed form even in this ultrathin film. In addition, the dissolution rate of the resist tended to be faster with thickness reduction. Both the existence of polymer aggregates and the fast dissolution of the entire resist polymer possibly caused the larger roughness in the ultrathin resist films.

Original language	English
Pages (from-to)	L1342-L1344
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	41
Issue number	11 B
Publication status	Published - Nov 15 2002

Keywords

AFM
Dissolution rate
Electron beam
Line-edge roughness
Nanolithography
Polymer aggregate
Ultrathin resist film

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

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@article{845275ea814f436c8c3a242cd9a31b0a,

title = "Resist thinning effect on nanometer-scale line-edge roughness",

abstract = "The thickness dependence of the roughness of ultrathin (≤ 100 nm) electron-beam resist (ZEP520) was investigated using an atomic force microscope (AFM). The roughness (linewidth fluctuations of line patterns) increased with decreasing resist thickness, especially below 30 nm. On the other hand, polymer aggregates, which are well observed in conventional resists, existed in compressed form even in this ultrathin film. In addition, the dissolution rate of the resist tended to be faster with thickness reduction. Both the existence of polymer aggregates and the fast dissolution of the entire resist polymer possibly caused the larger roughness in the ultrathin resist films.",

keywords = "AFM, Dissolution rate, Electron beam, Line-edge roughness, Nanolithography, Polymer aggregate, Ultrathin resist film",

author = "Kenichi Kanzaki and Toru Yamaguchi and Masao Nagase and Kenji Yamazaki and Hideo Namatsu",

year = "2002",

month = nov,

day = "15",

language = "English",

volume = "41",

pages = "L1342--L1344",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

number = "11 B",

}

TY - JOUR

T1 - Resist thinning effect on nanometer-scale line-edge roughness

AU - Kanzaki, Kenichi

AU - Yamaguchi, Toru

AU - Nagase, Masao

AU - Yamazaki, Kenji

AU - Namatsu, Hideo

PY - 2002/11/15

Y1 - 2002/11/15

N2 - The thickness dependence of the roughness of ultrathin (≤ 100 nm) electron-beam resist (ZEP520) was investigated using an atomic force microscope (AFM). The roughness (linewidth fluctuations of line patterns) increased with decreasing resist thickness, especially below 30 nm. On the other hand, polymer aggregates, which are well observed in conventional resists, existed in compressed form even in this ultrathin film. In addition, the dissolution rate of the resist tended to be faster with thickness reduction. Both the existence of polymer aggregates and the fast dissolution of the entire resist polymer possibly caused the larger roughness in the ultrathin resist films.

AB - The thickness dependence of the roughness of ultrathin (≤ 100 nm) electron-beam resist (ZEP520) was investigated using an atomic force microscope (AFM). The roughness (linewidth fluctuations of line patterns) increased with decreasing resist thickness, especially below 30 nm. On the other hand, polymer aggregates, which are well observed in conventional resists, existed in compressed form even in this ultrathin film. In addition, the dissolution rate of the resist tended to be faster with thickness reduction. Both the existence of polymer aggregates and the fast dissolution of the entire resist polymer possibly caused the larger roughness in the ultrathin resist films.

KW - AFM

KW - Dissolution rate

KW - Electron beam

KW - Line-edge roughness

KW - Nanolithography

KW - Polymer aggregate

KW - Ultrathin resist film

UR - http://www.scopus.com/inward/record.url?scp=0037113605&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037113605&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0037113605

VL - 41

SP - L1342-L1344

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

SN - 0021-4922

IS - 11 B

ER -