Abstract
The thickness dependence of the roughness of ultrathin (≤ 100 nm) electron-beam resist (ZEP520) was investigated using an atomic force microscope (AFM). The roughness (linewidth fluctuations of line patterns) increased with decreasing resist thickness, especially below 30 nm. On the other hand, polymer aggregates, which are well observed in conventional resists, existed in compressed form even in this ultrathin film. In addition, the dissolution rate of the resist tended to be faster with thickness reduction. Both the existence of polymer aggregates and the fast dissolution of the entire resist polymer possibly caused the larger roughness in the ultrathin resist films.
| Original language | English |
|---|---|
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 41 |
| Issue number | 11 B |
| Publication status | Published - Nov 15 2002 |
| Externally published | Yes |
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Keywords
- AFM
- Dissolution rate
- Electron beam
- Line-edge roughness
- Nanolithography
- Polymer aggregate
- Ultrathin resist film
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Resist thinning effect on nanometer-scale line-edge roughness. / Kanzaki, Kenichi; Yamaguchi, Toru; Nagase, Masao; Yamazaki, Kenji; Namatsu, Hideo.
In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 41, No. 11 B, 15.11.2002.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Resist thinning effect on nanometer-scale line-edge roughness
AU - Kanzaki, Kenichi
AU - Yamaguchi, Toru
AU - Nagase, Masao
AU - Yamazaki, Kenji
AU - Namatsu, Hideo
PY - 2002/11/15
Y1 - 2002/11/15
N2 - The thickness dependence of the roughness of ultrathin (≤ 100 nm) electron-beam resist (ZEP520) was investigated using an atomic force microscope (AFM). The roughness (linewidth fluctuations of line patterns) increased with decreasing resist thickness, especially below 30 nm. On the other hand, polymer aggregates, which are well observed in conventional resists, existed in compressed form even in this ultrathin film. In addition, the dissolution rate of the resist tended to be faster with thickness reduction. Both the existence of polymer aggregates and the fast dissolution of the entire resist polymer possibly caused the larger roughness in the ultrathin resist films.
AB - The thickness dependence of the roughness of ultrathin (≤ 100 nm) electron-beam resist (ZEP520) was investigated using an atomic force microscope (AFM). The roughness (linewidth fluctuations of line patterns) increased with decreasing resist thickness, especially below 30 nm. On the other hand, polymer aggregates, which are well observed in conventional resists, existed in compressed form even in this ultrathin film. In addition, the dissolution rate of the resist tended to be faster with thickness reduction. Both the existence of polymer aggregates and the fast dissolution of the entire resist polymer possibly caused the larger roughness in the ultrathin resist films.
KW - AFM
KW - Dissolution rate
KW - Electron beam
KW - Line-edge roughness
KW - Nanolithography
KW - Polymer aggregate
KW - Ultrathin resist film
UR - http://www.scopus.com/inward/record.url?scp=0037113605&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0037113605&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0037113605
VL - 41
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 11 B
ER -