We have devised a new resist-coating method using spin coating for creating three-dimensional (3D) nanostructures in semiconductors. Using this method, we were able to successfully coat poly(methyl methacrylate) (PMMA) films on the vertical side faces of micrometer-order Si blocks. The use of a solvent with low viscosity was found to be effective for obtaining good uniformity in resist thickness. Moreover, Monte Carlo simulations of electron scattering revealed that fine patterning on both the opposite side faces of a Si block should be possible by simultaneous development followed by electron beam (EB) writing from opposite directions, despite electron scattering.
ASJC Scopus subject areas
- Physics and Astronomy(all)