Resist coating on vertical side faces using conventional spin coating for creating three-dimensional nanostructures in semiconductors

Kenji Yamazaki, Hiroshi Yamaguchi

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We have devised a new resist-coating method using spin coating for creating three-dimensional (3D) nanostructures in semiconductors. Using this method, we were able to successfully coat poly(methyl methacrylate) (PMMA) films on the vertical side faces of micrometer-order Si blocks. The use of a solvent with low viscosity was found to be effective for obtaining good uniformity in resist thickness. Moreover, Monte Carlo simulations of electron scattering revealed that fine patterning on both the opposite side faces of a Si block should be possible by simultaneous development followed by electron beam (EB) writing from opposite directions, despite electron scattering.

Original languageEnglish
Article number106501
JournalApplied Physics Express
Volume3
Issue number10
DOIs
Publication statusPublished - Oct 2010
Externally publishedYes

Fingerprint

Electron scattering
Spin coating
coating
Nanostructures
electron scattering
Semiconductor materials
coatings
Coatings
Polymethyl methacrylates
polymethyl methacrylate
micrometers
Electron beams
electron beams
Viscosity
viscosity
simulation
Monte Carlo simulation

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Resist coating on vertical side faces using conventional spin coating for creating three-dimensional nanostructures in semiconductors. / Yamazaki, Kenji; Yamaguchi, Hiroshi.

In: Applied Physics Express, Vol. 3, No. 10, 106501, 10.2010.

Research output: Contribution to journalArticle

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