The reliability of InP/InGaAs uni-traveling-carrier photodiodes has been studied. A failure rate of 42 FIT at 25 C was obtained/from long-term bias-temperature tests. Stable operations for over 2000 h were also confirmed under high optical input conditions.
|Number of pages||2|
|Publication status||Published - Dec 1 2001|
|Event||27th European Conference on Optical Communications - Amsterdam, Netherlands|
Duration: Sep 30 2001 → Oct 4 2001
|Other||27th European Conference on Optical Communications|
|Period||9/30/01 → 10/4/01|
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