Abstract
The reliability of InP/InGaAs uni-traveling-carrier photodiodes has been studied. A failure rate of 42 FIT at 25 C was obtained/from long-term bias-temperature tests. Stable operations for over 2000 h were also confirmed under high optical input conditions.
Original language | English |
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Pages | 556-557 |
Number of pages | 2 |
Publication status | Published - Dec 1 2001 |
Externally published | Yes |
Event | 27th European Conference on Optical Communications - Amsterdam, Netherlands Duration: Sept 30 2001 → Oct 4 2001 |
Other
Other | 27th European Conference on Optical Communications |
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Country/Territory | Netherlands |
City | Amsterdam |
Period | 9/30/01 → 10/4/01 |
ASJC Scopus subject areas
- Engineering(all)