Reliability study on uni-traveling-carrier photodiode for a 40 Gbit/s optical transmission systems

T. Furuta, H. Fushimi, T. Yasui, Y. Muramoto, H. Kamioka, H. Mawatari, H. Fukano, T. Ishibashi, H. Ito

Research output: Contribution to conferencePaperpeer-review

1 Citation (Scopus)

Abstract

The reliability of InP/InGaAs uni-traveling-carrier photodiodes has been studied. A failure rate of 42 FIT at 25 C was obtained/from long-term bias-temperature tests. Stable operations for over 2000 h were also confirmed under high optical input conditions.

Original languageEnglish
Pages556-557
Number of pages2
Publication statusPublished - Dec 1 2001
Externally publishedYes
Event27th European Conference on Optical Communications - Amsterdam, Netherlands
Duration: Sept 30 2001Oct 4 2001

Other

Other27th European Conference on Optical Communications
Country/TerritoryNetherlands
CityAmsterdam
Period9/30/0110/4/01

ASJC Scopus subject areas

  • Engineering(all)

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