TY - JOUR
T1 - Reduction of graphene oxide at the interface between a Ni layer and a SiO2 substrate
AU - Tanaka, Hiroshige
AU - Obata, Seiji
AU - Saiki, Koichiro
N1 - Funding Information:
This work was partially supported by the New Energy and Industrial Technology Development Organization (NEDO). H.T. acknowledges Global COE Program “Chemistry Innovation through Cooperation of Science and Engineering”, MEXT , Japan, for their financial support.
PY - 2013/8
Y1 - 2013/8
N2 - Reduction of graphene oxide (GO) was carried out on SiO2 using a thin Ni overlayer as a catalyst. A Ni/GO/SiO2 structure was heated at 800 C in high vacuum for 6 min. After removing the Ni overlayer, formation of graphene was confirmed by Raman spectroscopy. For the Ni overlayer thinner than 40 nm, GO was reduced to graphene on-site. For the thicker Ni overlayer, however, GO was completely decomposed and graphene was formed in a segregation and/or precipitation process. The use of GO with a thin Ni overlayer enabled on-site and transfer-free fabrication of graphene without use of such flammable gases as methane and hydrogen.
AB - Reduction of graphene oxide (GO) was carried out on SiO2 using a thin Ni overlayer as a catalyst. A Ni/GO/SiO2 structure was heated at 800 C in high vacuum for 6 min. After removing the Ni overlayer, formation of graphene was confirmed by Raman spectroscopy. For the Ni overlayer thinner than 40 nm, GO was reduced to graphene on-site. For the thicker Ni overlayer, however, GO was completely decomposed and graphene was formed in a segregation and/or precipitation process. The use of GO with a thin Ni overlayer enabled on-site and transfer-free fabrication of graphene without use of such flammable gases as methane and hydrogen.
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U2 - 10.1016/j.carbon.2013.03.041
DO - 10.1016/j.carbon.2013.03.041
M3 - Article
AN - SCOPUS:84877710667
VL - 59
SP - 472
EP - 478
JO - Carbon
JF - Carbon
SN - 0008-6223
ER -