Reduction of graphene oxide at the interface between a Ni layer and a SiO2 substrate

Hiroshige Tanaka, Seiji Obata, Koichiro Saiki

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Reduction of graphene oxide (GO) was carried out on SiO2 using a thin Ni overlayer as a catalyst. A Ni/GO/SiO2 structure was heated at 800 C in high vacuum for 6 min. After removing the Ni overlayer, formation of graphene was confirmed by Raman spectroscopy. For the Ni overlayer thinner than 40 nm, GO was reduced to graphene on-site. For the thicker Ni overlayer, however, GO was completely decomposed and graphene was formed in a segregation and/or precipitation process. The use of GO with a thin Ni overlayer enabled on-site and transfer-free fabrication of graphene without use of such flammable gases as methane and hydrogen.

Original languageEnglish
Pages (from-to)472-478
Number of pages7
JournalCarbon
Volume59
DOIs
Publication statusPublished - Aug 1 2013
Externally publishedYes

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Oxides
Graphene
Substrates
Methane
Raman spectroscopy
Hydrogen
Gases
Vacuum
Fabrication
Catalysts

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

Cite this

Reduction of graphene oxide at the interface between a Ni layer and a SiO2 substrate. / Tanaka, Hiroshige; Obata, Seiji; Saiki, Koichiro.

In: Carbon, Vol. 59, 01.08.2013, p. 472-478.

Research output: Contribution to journalArticle

Tanaka, Hiroshige ; Obata, Seiji ; Saiki, Koichiro. / Reduction of graphene oxide at the interface between a Ni layer and a SiO2 substrate. In: Carbon. 2013 ; Vol. 59. pp. 472-478.
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