Abstract
Reduction of graphene oxide (GO) was carried out on SiO2 using a thin Ni overlayer as a catalyst. A Ni/GO/SiO2 structure was heated at 800 C in high vacuum for 6 min. After removing the Ni overlayer, formation of graphene was confirmed by Raman spectroscopy. For the Ni overlayer thinner than 40 nm, GO was reduced to graphene on-site. For the thicker Ni overlayer, however, GO was completely decomposed and graphene was formed in a segregation and/or precipitation process. The use of GO with a thin Ni overlayer enabled on-site and transfer-free fabrication of graphene without use of such flammable gases as methane and hydrogen.
Original language | English |
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Pages (from-to) | 472-478 |
Number of pages | 7 |
Journal | Carbon |
Volume | 59 |
DOIs | |
Publication status | Published - Aug 1 2013 |
Externally published | Yes |
ASJC Scopus subject areas
- Chemistry(all)
- Materials Science(all)