Abstract
Reduction of graphene oxide (GO) was carried out on SiO2 using a thin Ni overlayer as a catalyst. A Ni/GO/SiO2 structure was heated at 800 C in high vacuum for 6 min. After removing the Ni overlayer, formation of graphene was confirmed by Raman spectroscopy. For the Ni overlayer thinner than 40 nm, GO was reduced to graphene on-site. For the thicker Ni overlayer, however, GO was completely decomposed and graphene was formed in a segregation and/or precipitation process. The use of GO with a thin Ni overlayer enabled on-site and transfer-free fabrication of graphene without use of such flammable gases as methane and hydrogen.
| Original language | English |
|---|---|
| Pages (from-to) | 472-478 |
| Number of pages | 7 |
| Journal | Carbon |
| Volume | 59 |
| DOIs | |
| Publication status | Published - Aug 1 2013 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Chemistry(all)
- Materials Science(all)
Cite this
Reduction of graphene oxide at the interface between a Ni layer and a SiO2 substrate. / Tanaka, Hiroshige; Obata, Seiji; Saiki, Koichiro.
In: Carbon, Vol. 59, 01.08.2013, p. 472-478.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Reduction of graphene oxide at the interface between a Ni layer and a SiO2 substrate
AU - Tanaka, Hiroshige
AU - Obata, Seiji
AU - Saiki, Koichiro
PY - 2013/8/1
Y1 - 2013/8/1
N2 - Reduction of graphene oxide (GO) was carried out on SiO2 using a thin Ni overlayer as a catalyst. A Ni/GO/SiO2 structure was heated at 800 C in high vacuum for 6 min. After removing the Ni overlayer, formation of graphene was confirmed by Raman spectroscopy. For the Ni overlayer thinner than 40 nm, GO was reduced to graphene on-site. For the thicker Ni overlayer, however, GO was completely decomposed and graphene was formed in a segregation and/or precipitation process. The use of GO with a thin Ni overlayer enabled on-site and transfer-free fabrication of graphene without use of such flammable gases as methane and hydrogen.
AB - Reduction of graphene oxide (GO) was carried out on SiO2 using a thin Ni overlayer as a catalyst. A Ni/GO/SiO2 structure was heated at 800 C in high vacuum for 6 min. After removing the Ni overlayer, formation of graphene was confirmed by Raman spectroscopy. For the Ni overlayer thinner than 40 nm, GO was reduced to graphene on-site. For the thicker Ni overlayer, however, GO was completely decomposed and graphene was formed in a segregation and/or precipitation process. The use of GO with a thin Ni overlayer enabled on-site and transfer-free fabrication of graphene without use of such flammable gases as methane and hydrogen.
UR - http://www.scopus.com/inward/record.url?scp=84877710667&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84877710667&partnerID=8YFLogxK
U2 - 10.1016/j.carbon.2013.03.041
DO - 10.1016/j.carbon.2013.03.041
M3 - Article
AN - SCOPUS:84877710667
VL - 59
SP - 472
EP - 478
JO - Carbon
JF - Carbon
SN - 0008-6223
ER -