Rapid preparation of solution-processed InGaZnO thin films by microwave annealing and photoirradiation

Heajeong Cheong; Shintaro Ogura; Hirobumi Ushijima; Manabu Yoshida; Nobuko Fukuda; Sei Uemura

doi:10.1063/1.4922512

Rapid preparation of solution-processed InGaZnO thin films by microwave annealing and photoirradiation

Heajeong Cheong, Shintaro Ogura, Hirobumi Ushijima, Manabu Yoshida, Nobuko Fukuda, Sei Uemura

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

We fabricated solution-processed indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) by microwave (MW) annealing an IGZO precursor film followed by irradiating with vacuum ultraviolet (VUV) light. MW annealing allows more rapid heating of the precursor film than conventional annealing processes using a hot plate or electric oven and promotes the crystallization of IGZO. VUV irradiation was used to reduce the duration and temperature of the post-annealing step. Consequently, the IGZO TFTs fabricated through MW annealing for 5 min and VUV irradiation for 1 min exhibited an on/off current ratio of 10⁸ and a field-effect mobility of 0.3 cm² V^-1s^-1. These results indicate that MW annealing and photoirradiation is an effective combination for annealing solution processed IGZO precursor films to prepare the semiconductor layers of TFTs.

Original language	English
Article number	067127
Journal	AIP Advances
Volume	5
Issue number	6
DOIs	https://doi.org/10.1063/1.4922512
Publication status	Published - Jun 1 2015
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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Cite this

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title = "Rapid preparation of solution-processed InGaZnO thin films by microwave annealing and photoirradiation",

abstract = "We fabricated solution-processed indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) by microwave (MW) annealing an IGZO precursor film followed by irradiating with vacuum ultraviolet (VUV) light. MW annealing allows more rapid heating of the precursor film than conventional annealing processes using a hot plate or electric oven and promotes the crystallization of IGZO. VUV irradiation was used to reduce the duration and temperature of the post-annealing step. Consequently, the IGZO TFTs fabricated through MW annealing for 5 min and VUV irradiation for 1 min exhibited an on/off current ratio of 108 and a field-effect mobility of 0.3 cm2 V-1s-1. These results indicate that MW annealing and photoirradiation is an effective combination for annealing solution processed IGZO precursor films to prepare the semiconductor layers of TFTs.",

author = "Heajeong Cheong and Shintaro Ogura and Hirobumi Ushijima and Manabu Yoshida and Nobuko Fukuda and Sei Uemura",

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T1 - Rapid preparation of solution-processed InGaZnO thin films by microwave annealing and photoirradiation

AU - Cheong, Heajeong

AU - Ogura, Shintaro

AU - Ushijima, Hirobumi

AU - Yoshida, Manabu

AU - Fukuda, Nobuko

AU - Uemura, Sei

PY - 2015/6/1

Y1 - 2015/6/1

N2 - We fabricated solution-processed indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) by microwave (MW) annealing an IGZO precursor film followed by irradiating with vacuum ultraviolet (VUV) light. MW annealing allows more rapid heating of the precursor film than conventional annealing processes using a hot plate or electric oven and promotes the crystallization of IGZO. VUV irradiation was used to reduce the duration and temperature of the post-annealing step. Consequently, the IGZO TFTs fabricated through MW annealing for 5 min and VUV irradiation for 1 min exhibited an on/off current ratio of 108 and a field-effect mobility of 0.3 cm2 V-1s-1. These results indicate that MW annealing and photoirradiation is an effective combination for annealing solution processed IGZO precursor films to prepare the semiconductor layers of TFTs.

AB - We fabricated solution-processed indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) by microwave (MW) annealing an IGZO precursor film followed by irradiating with vacuum ultraviolet (VUV) light. MW annealing allows more rapid heating of the precursor film than conventional annealing processes using a hot plate or electric oven and promotes the crystallization of IGZO. VUV irradiation was used to reduce the duration and temperature of the post-annealing step. Consequently, the IGZO TFTs fabricated through MW annealing for 5 min and VUV irradiation for 1 min exhibited an on/off current ratio of 108 and a field-effect mobility of 0.3 cm2 V-1s-1. These results indicate that MW annealing and photoirradiation is an effective combination for annealing solution processed IGZO precursor films to prepare the semiconductor layers of TFTs.

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Rapid preparation of solution-processed InGaZnO thin films by microwave annealing and photoirradiation

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