Rapid epitaxial growth of Si and SiGe mono-crystalline films on silicon-on-glass substrates by reactive CVD using SiH4, GeH 4, and F2

Hiroshi Noge, Akira Okada, Ta Ko Chuang, J. Greg Couillard, Michio Kondo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have succeeded in the rapid epitaxial growth of Si, Ge, and SiGe films on Si substrates below 670°C by reactive CVD utilizing the spontaneous exothermic reaction between SiH4, GeH4, and F2. Mono-crystalline SiGe epitaxial films with Ge composition ranging from 0.1 to 1.0 have been successfully grown by reactive CVD for the first time. This technique has also been successfully applied to the growth of these films on silicon-on-glass substrates by a 20-50°C increase of the heating temperature. Over 10 μm thick epitaxial films at 3 nm/s growth rate are obtained. The etch pit density of the 5.2 μm-thick Si0.5Ge 0.5 film is as low as 5 × 106 cm-2 on top. Mobilities of the undoped SiGe and Si films are 180 to 550 cm 2/Vs, confirming the good crystallinity of the epitaxial films.

Original languageEnglish
Title of host publicationAmorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2012
Pages331-337
Number of pages7
Volume1426
DOIs
Publication statusPublished - 2012
Externally publishedYes
Event2012 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 9 2012Apr 13 2012

Other

Other2012 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/9/124/13/12

Fingerprint

Silicon
Epitaxial growth
Chemical vapor deposition
Epitaxial films
vapor deposition
Crystalline materials
Glass
glass
silicon
Substrates
Exothermic reactions
Thick films
exothermic reactions
Heating
thick films
crystallinity
Chemical analysis
heating
Temperature

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Noge, H., Okada, A., Chuang, T. K., Couillard, J. G., & Kondo, M. (2012). Rapid epitaxial growth of Si and SiGe mono-crystalline films on silicon-on-glass substrates by reactive CVD using SiH4, GeH 4, and F2. In Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2012 (Vol. 1426, pp. 331-337) https://doi.org/10.1557/opl.2012.867

Rapid epitaxial growth of Si and SiGe mono-crystalline films on silicon-on-glass substrates by reactive CVD using SiH4, GeH 4, and F2. / Noge, Hiroshi; Okada, Akira; Chuang, Ta Ko; Couillard, J. Greg; Kondo, Michio.

Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2012. Vol. 1426 2012. p. 331-337.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Noge, H, Okada, A, Chuang, TK, Couillard, JG & Kondo, M 2012, Rapid epitaxial growth of Si and SiGe mono-crystalline films on silicon-on-glass substrates by reactive CVD using SiH4, GeH 4, and F2. in Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2012. vol. 1426, pp. 331-337, 2012 MRS Spring Meeting, San Francisco, CA, United States, 4/9/12. https://doi.org/10.1557/opl.2012.867
Noge H, Okada A, Chuang TK, Couillard JG, Kondo M. Rapid epitaxial growth of Si and SiGe mono-crystalline films on silicon-on-glass substrates by reactive CVD using SiH4, GeH 4, and F2. In Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2012. Vol. 1426. 2012. p. 331-337 https://doi.org/10.1557/opl.2012.867
Noge, Hiroshi ; Okada, Akira ; Chuang, Ta Ko ; Couillard, J. Greg ; Kondo, Michio. / Rapid epitaxial growth of Si and SiGe mono-crystalline films on silicon-on-glass substrates by reactive CVD using SiH4, GeH 4, and F2. Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2012. Vol. 1426 2012. pp. 331-337
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