Rapid epitaxial growth of Si and SiGe mono-crystalline films on silicon-on-glass substrates by reactive CVD using SiH4, GeH 4, and F2

Hiroshi Noge, Akira Okada, Ta Ko Chuang, J. Greg Couillard, Michio Kondo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have succeeded in the rapid epitaxial growth of Si, Ge, and SiGe films on Si substrates below 670°C by reactive CVD utilizing the spontaneous exothermic reaction between SiH4, GeH4, and F2. Mono-crystalline SiGe epitaxial films with Ge composition ranging from 0.1 to 1.0 have been successfully grown by reactive CVD for the first time. This technique has also been successfully applied to the growth of these films on silicon-on-glass substrates by a 20-50°C increase of the heating temperature. Over 10 μm thick epitaxial films at 3 nm/s growth rate are obtained. The etch pit density of the 5.2 μm-thick Si0.5Ge 0.5 film is as low as 5 × 106 cm-2 on top. Mobilities of the undoped SiGe and Si films are 180 to 550 cm 2/Vs, confirming the good crystallinity of the epitaxial films.

Original languageEnglish
Title of host publicationAmorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2012
Pages331-337
Number of pages7
DOIs
Publication statusPublished - Nov 28 2012
Externally publishedYes
Event2012 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 9 2012Apr 13 2012

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1426
ISSN (Print)0272-9172

Other

Other2012 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/9/124/13/12

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Noge, H., Okada, A., Chuang, T. K., Couillard, J. G., & Kondo, M. (2012). Rapid epitaxial growth of Si and SiGe mono-crystalline films on silicon-on-glass substrates by reactive CVD using SiH4, GeH 4, and F2. In Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2012 (pp. 331-337). (Materials Research Society Symposium Proceedings; Vol. 1426). https://doi.org/10.1557/opl.2012.867