R&D of a pixel sensor based on 0.15 μ m fully depleted SOI technology

Toru Tsuboyama, Yasuo Arai, Koichi Fukuda, Kazuhiko Hara, Hirokazu Hayashi, Masashi Hazumi, Jiro Ida, Hirokazu Ikeda, Yoichi Ikegami, Hirokazu Ishino, Takeo Kawasaki, Takashi Kohriki, Hirotaka Komatsubara, Elena Martin, Hideki Miyake, Ai Mochizuki, Morifumi Ohno, Yuuji Saegusa, Hiro Tajima, Osamu TajimaTomiaki Takahashi, Susumu Terada, Yoshinobu Unno, Yutaka Ushiroda, Gary Varner

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Development of a monolithic pixel detector based on SOI (silicon on insulator) technology was started at KEK in 2005. The substrate of the SOI wafer is used as a radiation sensor. At end of 2005, we submitted several test-structure group (TEG) chips for the 150 nm, fully depleted CMOS process. The TEG designs and preliminary results are presented.

Original languageEnglish
Pages (from-to)861-865
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume582
Issue number3
DOIs
Publication statusPublished - Dec 1 2007
Externally publishedYes

Fingerprint

Silicon on insulator technology
Pixels
pixels
insulators
Detectors
Radiation
Silicon
sensors
Sensors
silicon
Substrates
CMOS
chips
wafers
detectors
radiation

Keywords

  • Monolithic pixel sensor
  • SOI CMOS technology

ASJC Scopus subject areas

  • Instrumentation
  • Nuclear and High Energy Physics

Cite this

R&D of a pixel sensor based on 0.15 μ m fully depleted SOI technology. / Tsuboyama, Toru; Arai, Yasuo; Fukuda, Koichi; Hara, Kazuhiko; Hayashi, Hirokazu; Hazumi, Masashi; Ida, Jiro; Ikeda, Hirokazu; Ikegami, Yoichi; Ishino, Hirokazu; Kawasaki, Takeo; Kohriki, Takashi; Komatsubara, Hirotaka; Martin, Elena; Miyake, Hideki; Mochizuki, Ai; Ohno, Morifumi; Saegusa, Yuuji; Tajima, Hiro; Tajima, Osamu; Takahashi, Tomiaki; Terada, Susumu; Unno, Yoshinobu; Ushiroda, Yutaka; Varner, Gary.

In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 582, No. 3, 01.12.2007, p. 861-865.

Research output: Contribution to journalArticle

Tsuboyama, T, Arai, Y, Fukuda, K, Hara, K, Hayashi, H, Hazumi, M, Ida, J, Ikeda, H, Ikegami, Y, Ishino, H, Kawasaki, T, Kohriki, T, Komatsubara, H, Martin, E, Miyake, H, Mochizuki, A, Ohno, M, Saegusa, Y, Tajima, H, Tajima, O, Takahashi, T, Terada, S, Unno, Y, Ushiroda, Y & Varner, G 2007, 'R&D of a pixel sensor based on 0.15 μ m fully depleted SOI technology', Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 582, no. 3, pp. 861-865. https://doi.org/10.1016/j.nima.2007.07.111
Tsuboyama, Toru ; Arai, Yasuo ; Fukuda, Koichi ; Hara, Kazuhiko ; Hayashi, Hirokazu ; Hazumi, Masashi ; Ida, Jiro ; Ikeda, Hirokazu ; Ikegami, Yoichi ; Ishino, Hirokazu ; Kawasaki, Takeo ; Kohriki, Takashi ; Komatsubara, Hirotaka ; Martin, Elena ; Miyake, Hideki ; Mochizuki, Ai ; Ohno, Morifumi ; Saegusa, Yuuji ; Tajima, Hiro ; Tajima, Osamu ; Takahashi, Tomiaki ; Terada, Susumu ; Unno, Yoshinobu ; Ushiroda, Yutaka ; Varner, Gary. / R&D of a pixel sensor based on 0.15 μ m fully depleted SOI technology. In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2007 ; Vol. 582, No. 3. pp. 861-865.
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AU - Arai, Yasuo

AU - Fukuda, Koichi

AU - Hara, Kazuhiko

AU - Hayashi, Hirokazu

AU - Hazumi, Masashi

AU - Ida, Jiro

AU - Ikeda, Hirokazu

AU - Ikegami, Yoichi

AU - Ishino, Hirokazu

AU - Kawasaki, Takeo

AU - Kohriki, Takashi

AU - Komatsubara, Hirotaka

AU - Martin, Elena

AU - Miyake, Hideki

AU - Mochizuki, Ai

AU - Ohno, Morifumi

AU - Saegusa, Yuuji

AU - Tajima, Hiro

AU - Tajima, Osamu

AU - Takahashi, Tomiaki

AU - Terada, Susumu

AU - Unno, Yoshinobu

AU - Ushiroda, Yutaka

AU - Varner, Gary

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