Development of a monolithic pixel detector based on SOI (silicon on insulator) technology was started at KEK in 2005. The substrate of the SOI wafer is used as a radiation sensor. At end of 2005, we submitted several test-structure group (TEG) chips for the 150 nm, fully depleted CMOS process. The TEG designs and preliminary results are presented.
|Number of pages||5|
|Journal||Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment|
|Publication status||Published - Dec 1 2007|
- Monolithic pixel sensor
- SOI CMOS technology
ASJC Scopus subject areas
- Nuclear and High Energy Physics