R&D of a pixel sensor based on 0.15 μ m fully depleted SOI technology

Toru Tsuboyama, Yasuo Arai, Koichi Fukuda, Kazuhiko Hara, Hirokazu Hayashi, Masashi Hazumi, Jiro Ida, Hirokazu Ikeda, Yoichi Ikegami, Hirokazu Ishino, Takeo Kawasaki, Takashi Kohriki, Hirotaka Komatsubara, Elena Martin, Hideki Miyake, Ai Mochizuki, Morifumi Ohno, Yuuji Saegusa, Hiro Tajima, Osamu TajimaTomiaki Takahashi, Susumu Terada, Yoshinobu Unno, Yutaka Ushiroda, Gary Varner

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Development of a monolithic pixel detector based on SOI (silicon on insulator) technology was started at KEK in 2005. The substrate of the SOI wafer is used as a radiation sensor. At end of 2005, we submitted several test-structure group (TEG) chips for the 150 nm, fully depleted CMOS process. The TEG designs and preliminary results are presented.

Original languageEnglish
Pages (from-to)861-865
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume582
Issue number3
DOIs
Publication statusPublished - Dec 1 2007

Keywords

  • Monolithic pixel sensor
  • SOI CMOS technology

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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    Tsuboyama, T., Arai, Y., Fukuda, K., Hara, K., Hayashi, H., Hazumi, M., Ida, J., Ikeda, H., Ikegami, Y., Ishino, H., Kawasaki, T., Kohriki, T., Komatsubara, H., Martin, E., Miyake, H., Mochizuki, A., Ohno, M., Saegusa, Y., Tajima, H., ... Varner, G. (2007). R&D of a pixel sensor based on 0.15 μ m fully depleted SOI technology. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 582(3), 861-865. https://doi.org/10.1016/j.nima.2007.07.111