Raman scattering of disordered SiC

S. Nakashima, K. Kisoda, H. Niizuma, H. Harima

Research output: Contribution to journalArticle

14 Citations (Scopus)


We have measured Raman scattering from SiC crystals containing stacking disorders. Raman intensity profiles are calculated for models of disordered structures and compared with the observed spectra.

Original languageEnglish
Pages (from-to)371-373
Number of pages3
JournalPhysica B: Condensed Matter
Issue number1-4
Publication statusPublished - Apr 1 1996

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Nakashima, S., Kisoda, K., Niizuma, H., & Harima, H. (1996). Raman scattering of disordered SiC. Physica B: Condensed Matter, 219-220(1-4), 371-373. https://doi.org/10.1016/0921-4526(95)00748-2