Raman scattering of disordered SiC

S. Nakashima, K. Kisoda, H. Niizuma, H. Harima

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

We have measured Raman scattering from SiC crystals containing stacking disorders. Raman intensity profiles are calculated for models of disordered structures and compared with the observed spectra.

Original languageEnglish
Pages (from-to)371-373
Number of pages3
JournalPhysica B: Condensed Matter
Volume219-220
Issue number1-4
DOIs
Publication statusPublished - Apr 1 1996

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Raman scattering of disordered SiC'. Together they form a unique fingerprint.

  • Cite this

    Nakashima, S., Kisoda, K., Niizuma, H., & Harima, H. (1996). Raman scattering of disordered SiC. Physica B: Condensed Matter, 219-220(1-4), 371-373. https://doi.org/10.1016/0921-4526(95)00748-2