Raman scattering of disordered SiC

S. Nakashima, K. Kisoda, Hirotaka Niitsuma, H. Harima

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We have measured Raman scattering from SiC crystals containing stacking disorders. Raman intensity profiles are calculated for models of disordered structures and compared with the observed spectra.

Original languageEnglish
Pages (from-to)371-373
Number of pages3
JournalPhysica B: Condensed Matter
Volume219-220
Issue number1-4
DOIs
Publication statusPublished - Apr 1 1996
Externally publishedYes

Fingerprint

Raman scattering
disorders
Raman spectra
Crystals
profiles
crystals

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Nakashima, S., Kisoda, K., Niitsuma, H., & Harima, H. (1996). Raman scattering of disordered SiC. Physica B: Condensed Matter, 219-220(1-4), 371-373. https://doi.org/10.1016/0921-4526(95)00748-2

Raman scattering of disordered SiC. / Nakashima, S.; Kisoda, K.; Niitsuma, Hirotaka; Harima, H.

In: Physica B: Condensed Matter, Vol. 219-220, No. 1-4, 01.04.1996, p. 371-373.

Research output: Contribution to journalArticle

Nakashima, S, Kisoda, K, Niitsuma, H & Harima, H 1996, 'Raman scattering of disordered SiC', Physica B: Condensed Matter, vol. 219-220, no. 1-4, pp. 371-373. https://doi.org/10.1016/0921-4526(95)00748-2
Nakashima S, Kisoda K, Niitsuma H, Harima H. Raman scattering of disordered SiC. Physica B: Condensed Matter. 1996 Apr 1;219-220(1-4):371-373. https://doi.org/10.1016/0921-4526(95)00748-2
Nakashima, S. ; Kisoda, K. ; Niitsuma, Hirotaka ; Harima, H. / Raman scattering of disordered SiC. In: Physica B: Condensed Matter. 1996 ; Vol. 219-220, No. 1-4. pp. 371-373.
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