Radiation resistance of SOl pixel devices fabricated with OKI 0.15μ mFD-SOI Technology

K. Hara; M. Kochiyama; A. Mochizuki; T. Sega; Y. Arai; K. Fukuda; H. Hayashi; M. Hirose; J. Ida; H. Ikeda; K. Ikegami; Y. Ikemoto; H. Ishino; Y. Kawai; T. Kohriki; H. Komatsubara; H. Miyake; T. Miyoshi; M. Ohno; M. Okihara; S. Terada; T. Tsuboyama; Y. Unno

doi:10.1109/NSSMIC.2008.4774670

Radiation resistance of SOl pixel devices fabricated with OKI 0.15μ mFD-SOI Technology

K. Hara, M. Kochiyama, A. Mochizuki, T. Sega, Y. Arai, K. Fukuda, H. Hayashi, M. Hirose, J. Ida, H. Ikeda, K. Ikegami, Y. Ikemoto, H. Ishino, Y. Kawai, T. Kohriki, H. Komatsubara, H. Miyake, T. Miyoshi, M. Ohno, M. OkiharaS. Terada, T. Tsuboyama, Y. Unno

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Silicon-on-insulator (SOl) technology is being investigated for monolithic pixel device fabrication. The SOl wafers by UNIBOND allow the silicon resistivity to be optimized separately for the electronics and detector parts. We have fabricated pixel detectors using fully depleted SOl (FD-SOI) technology provided by OKI Semiconductor Co. Ltd. The first pixel devices consisting of 32×32 pixels each with 20 pm square were irradiated with ⁶⁰CO γ's up to 0.60 MGy and with 70-MeV protons up to 1.3×1016 I-MeV n_eqcm². The performance characterization was made on the electronics part and as a general detector from the response to RESET signals and to laser. The electronics operation was affected by radiation-induced charge accumulation in the oxide layers. Detailed evaluation using transistor test structures was separately carried out with covering a wider range of radiation level (0.12 kGy to 5.1 MGy) with ⁶⁰CO γ's.

Original language	English
Title of host publication	2008 IEEE Nuclear Science Symposium Conference Record, NSS/MIC 2008
Pages	1369-1374
Number of pages	6
DOIs	https://doi.org/10.1109/NSSMIC.2008.4774670
Publication status	Published - Dec 1 2008
Externally published	Yes
Event	2008 IEEE Nuclear Science Symposium Conference Record, NSS/MIC 2008 - Dresden, Germany Duration: Oct 19 2008 → Oct 25 2008

Publication series

Name	IEEE Nuclear Science Symposium Conference Record
ISSN (Print)	1095-7863

Other

Other	2008 IEEE Nuclear Science Symposium Conference Record, NSS/MIC 2008
Country	Germany
City	Dresden
Period	10/19/08 → 10/25/08

ASJC Scopus subject areas

Radiation
Nuclear and High Energy Physics
Radiology Nuclear Medicine and imaging

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Hara, K., Kochiyama, M., Mochizuki, A., Sega, T., Arai, Y., Fukuda, K., Hayashi, H., Hirose, M., Ida, J., Ikeda, H., Ikegami, K., Ikemoto, Y., Ishino, H., Kawai, Y., Kohriki, T., Komatsubara, H., Miyake, H., Miyoshi, T., Ohno, M., ... Unno, Y. (2008). Radiation resistance of SOl pixel devices fabricated with OKI 0.15μ mFD-SOI Technology. In 2008 IEEE Nuclear Science Symposium Conference Record, NSS/MIC 2008 (pp. 1369-1374). [4774670] (IEEE Nuclear Science Symposium Conference Record). https://doi.org/10.1109/NSSMIC.2008.4774670

Radiation resistance of SOl pixel devices fabricated with OKI 0.15μ mFD-SOI Technology. / Hara, K.; Kochiyama, M.; Mochizuki, A.; Sega, T.; Arai, Y.; Fukuda, K.; Hayashi, H.; Hirose, M.; Ida, J.; Ikeda, H.; Ikegami, K.; Ikemoto, Y.; Ishino, H.; Kawai, Y.; Kohriki, T.; Komatsubara, H.; Miyake, H.; Miyoshi, T.; Ohno, M.; Okihara, M.; Terada, S.; Tsuboyama, T.; Unno, Y.

2008 IEEE Nuclear Science Symposium Conference Record, NSS/MIC 2008. 2008. p. 1369-1374 4774670 (IEEE Nuclear Science Symposium Conference Record).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hara, K, Kochiyama, M, Mochizuki, A, Sega, T, Arai, Y, Fukuda, K, Hayashi, H, Hirose, M, Ida, J, Ikeda, H, Ikegami, K, Ikemoto, Y, Ishino, H, Kawai, Y, Kohriki, T, Komatsubara, H, Miyake, H, Miyoshi, T, Ohno, M, Okihara, M, Terada, S, Tsuboyama, T & Unno, Y 2008, Radiation resistance of SOl pixel devices fabricated with OKI 0.15μ mFD-SOI Technology. in 2008 IEEE Nuclear Science Symposium Conference Record, NSS/MIC 2008., 4774670, IEEE Nuclear Science Symposium Conference Record, pp. 1369-1374, 2008 IEEE Nuclear Science Symposium Conference Record, NSS/MIC 2008, Dresden, Germany, 10/19/08. https://doi.org/10.1109/NSSMIC.2008.4774670

Hara, K. ; Kochiyama, M. ; Mochizuki, A. ; Sega, T. ; Arai, Y. ; Fukuda, K. ; Hayashi, H. ; Hirose, M. ; Ida, J. ; Ikeda, H. ; Ikegami, K. ; Ikemoto, Y. ; Ishino, H. ; Kawai, Y. ; Kohriki, T. ; Komatsubara, H. ; Miyake, H. ; Miyoshi, T. ; Ohno, M. ; Okihara, M. ; Terada, S. ; Tsuboyama, T. ; Unno, Y. / Radiation resistance of SOl pixel devices fabricated with OKI 0.15μ mFD-SOI Technology. 2008 IEEE Nuclear Science Symposium Conference Record, NSS/MIC 2008. 2008. pp. 1369-1374 (IEEE Nuclear Science Symposium Conference Record).

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abstract = "Silicon-on-insulator (SOl) technology is being investigated for monolithic pixel device fabrication. The SOl wafers by UNIBOND allow the silicon resistivity to be optimized separately for the electronics and detector parts. We have fabricated pixel detectors using fully depleted SOl (FD-SOI) technology provided by OKI Semiconductor Co. Ltd. The first pixel devices consisting of 32×32 pixels each with 20 pm square were irradiated with 60CO γ's up to 0.60 MGy and with 70-MeV protons up to 1.3×1016 I-MeV neqcm2. The performance characterization was made on the electronics part and as a general detector from the response to RESET signals and to laser. The electronics operation was affected by radiation-induced charge accumulation in the oxide layers. Detailed evaluation using transistor test structures was separately carried out with covering a wider range of radiation level (0.12 kGy to 5.1 MGy) with 60CO γ's.",

author = "K. Hara and M. Kochiyama and A. Mochizuki and T. Sega and Y. Arai and K. Fukuda and H. Hayashi and M. Hirose and J. Ida and H. Ikeda and K. Ikegami and Y. Ikemoto and H. Ishino and Y. Kawai and T. Kohriki and H. Komatsubara and H. Miyake and T. Miyoshi and M. Ohno and M. Okihara and S. Terada and T. Tsuboyama and Y. Unno",

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AU - Hara, K.

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AU - Sega, T.

AU - Arai, Y.

AU - Fukuda, K.

AU - Hayashi, H.

AU - Hirose, M.

AU - Ida, J.

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AU - Ishino, H.

AU - Kawai, Y.

AU - Kohriki, T.

AU - Komatsubara, H.

AU - Miyake, H.

AU - Miyoshi, T.

AU - Ohno, M.

AU - Okihara, M.

AU - Terada, S.

AU - Tsuboyama, T.

AU - Unno, Y.

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N2 - Silicon-on-insulator (SOl) technology is being investigated for monolithic pixel device fabrication. The SOl wafers by UNIBOND allow the silicon resistivity to be optimized separately for the electronics and detector parts. We have fabricated pixel detectors using fully depleted SOl (FD-SOI) technology provided by OKI Semiconductor Co. Ltd. The first pixel devices consisting of 32×32 pixels each with 20 pm square were irradiated with 60CO γ's up to 0.60 MGy and with 70-MeV protons up to 1.3×1016 I-MeV neqcm2. The performance characterization was made on the electronics part and as a general detector from the response to RESET signals and to laser. The electronics operation was affected by radiation-induced charge accumulation in the oxide layers. Detailed evaluation using transistor test structures was separately carried out with covering a wider range of radiation level (0.12 kGy to 5.1 MGy) with 60CO γ's.

AB - Silicon-on-insulator (SOl) technology is being investigated for monolithic pixel device fabrication. The SOl wafers by UNIBOND allow the silicon resistivity to be optimized separately for the electronics and detector parts. We have fabricated pixel detectors using fully depleted SOl (FD-SOI) technology provided by OKI Semiconductor Co. Ltd. The first pixel devices consisting of 32×32 pixels each with 20 pm square were irradiated with 60CO γ's up to 0.60 MGy and with 70-MeV protons up to 1.3×1016 I-MeV neqcm2. The performance characterization was made on the electronics part and as a general detector from the response to RESET signals and to laser. The electronics operation was affected by radiation-induced charge accumulation in the oxide layers. Detailed evaluation using transistor test structures was separately carried out with covering a wider range of radiation level (0.12 kGy to 5.1 MGy) with 60CO γ's.

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