Radiation resistance of SOl pixel devices fabricated with OKI 0.15μ mFD-SOI Technology

K. Hara, M. Kochiyama, A. Mochizuki, T. Sega, Y. Arai, K. Fukuda, H. Hayashi, M. Hirose, J. Ida, H. Ikeda, K. Ikegami, Y. Ikemoto, H. Ishino, Y. Kawai, T. Kohriki, H. Komatsubara, H. Miyake, T. Miyoshi, M. Ohno, M. OkiharaS. Terada, T. Tsuboyama, Y. Unno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Silicon-on-insulator (SOl) technology is being investigated for monolithic pixel device fabrication. The SOl wafers by UNIBOND allow the silicon resistivity to be optimized separately for the electronics and detector parts. We have fabricated pixel detectors using fully depleted SOl (FD-SOI) technology provided by OKI Semiconductor Co. Ltd. The first pixel devices consisting of 32×32 pixels each with 20 pm square were irradiated with 60CO γ's up to 0.60 MGy and with 70-MeV protons up to 1.3×1016 I-MeV neqcm2. The performance characterization was made on the electronics part and as a general detector from the response to RESET signals and to laser. The electronics operation was affected by radiation-induced charge accumulation in the oxide layers. Detailed evaluation using transistor test structures was separately carried out with covering a wider range of radiation level (0.12 kGy to 5.1 MGy) with 60CO γ's.

Original languageEnglish
Title of host publication2008 IEEE Nuclear Science Symposium Conference Record, NSS/MIC 2008
Pages1369-1374
Number of pages6
DOIs
Publication statusPublished - Dec 1 2008
Externally publishedYes
Event2008 IEEE Nuclear Science Symposium Conference Record, NSS/MIC 2008 - Dresden, Germany
Duration: Oct 19 2008Oct 25 2008

Publication series

NameIEEE Nuclear Science Symposium Conference Record
ISSN (Print)1095-7863

Other

Other2008 IEEE Nuclear Science Symposium Conference Record, NSS/MIC 2008
CountryGermany
CityDresden
Period10/19/0810/25/08

ASJC Scopus subject areas

  • Radiation
  • Nuclear and High Energy Physics
  • Radiology Nuclear Medicine and imaging

Fingerprint Dive into the research topics of 'Radiation resistance of SOl pixel devices fabricated with OKI 0.15μ mFD-SOI Technology'. Together they form a unique fingerprint.

  • Cite this

    Hara, K., Kochiyama, M., Mochizuki, A., Sega, T., Arai, Y., Fukuda, K., Hayashi, H., Hirose, M., Ida, J., Ikeda, H., Ikegami, K., Ikemoto, Y., Ishino, H., Kawai, Y., Kohriki, T., Komatsubara, H., Miyake, H., Miyoshi, T., Ohno, M., ... Unno, Y. (2008). Radiation resistance of SOl pixel devices fabricated with OKI 0.15μ mFD-SOI Technology. In 2008 IEEE Nuclear Science Symposium Conference Record, NSS/MIC 2008 (pp. 1369-1374). [4774670] (IEEE Nuclear Science Symposium Conference Record). https://doi.org/10.1109/NSSMIC.2008.4774670