Radiation monitoring in Mrad range using radiation-sensing field-effect transistors

S. Stanič, Y. Asano, H. Ishino, A. Igarashi, S. Iwaida, Y. Nakano, H. Terazaki, T. Tsuboyama, I. Yoda, D. Žontar

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

In many of the recent e+e- particle physics experiments, monitoring of the accumulated dose in silicon is essential to maximize the lifetime of silicon vertex detectors operating in severe radiation environments. Using radiation-sensing field-effect transistors (RadFET) as radiation monitoring devices, we studied their responses during irradiation and during subsequent annealing. The relation between the RadFET response and the dose was determined by irradiations with a 60Co source with known activity. The study of annealing at three different temperatures showed that RadFETs gradually anneal for up to 40%. Annealing can be fitted by a sum of two exponential functions with time constants of 3 and 85 days.

Original languageEnglish
Pages (from-to)252-260
Number of pages9
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume545
Issue number1-2
DOIs
Publication statusPublished - Jun 11 2005
Externally publishedYes

Keywords

  • Annealing
  • B factory
  • Radiation monitoring
  • Silicon detectors

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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