Radiation hardness of VA1 with submicron process technology

M. Yokoyama, H. Aihara, M. Hazumi, Hirokazu Ishino, J. Kaneko, Y. Li, D. Marlow, S. Mikkelsen, E. Nygård, H. Tajima, J. Talebi, G. Varner, H. Yamamoto

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

We have studied the radiation hardness of the VA1, a Viking-architecture preamplifier VLSI chip. Large-scale integrated (LSI) samples are fabricated in 0.8 and 0.35 μm process technologies to improve the radiation hardness of the LSI for the Belle silicon vertex detector upgrade. We have observed significant improvement of the radiation hardness with 0.8-μm technology compared to 1.2-μm technology. Little degradation of noise and gain is observed up to a total dose of 20 Mrd for the VA1 fabricated in the 0.35-μm technology. We find that the radiation hardness improves with a scaling of better than tox-6 (tox: oxide thickness). Basic parameters of MOSFETs are also studied to understand the mechanism of radiation damage in the VA1.

Original languageEnglish
Pages (from-to)440-443
Number of pages4
JournalIEEE Transactions on Nuclear Science
Volume48
Issue number3 I
DOIs
Publication statusPublished - Jun 2001
Externally publishedYes

Fingerprint

hardness
Hardness
Radiation
radiation
Silicon detectors
preamplifiers
Radiation damage
very large scale integration
radiation damage
apexes
field effect transistors
chips
degradation
scaling
Degradation
dosage
Oxides
oxides
detectors
silicon

Keywords

  • Integrated circuit radiation effects
  • MOS analog integrated circuits
  • Radiation detector circuits
  • Radiation hardening
  • Silicon radiation detectors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering

Cite this

Yokoyama, M., Aihara, H., Hazumi, M., Ishino, H., Kaneko, J., Li, Y., ... Yamamoto, H. (2001). Radiation hardness of VA1 with submicron process technology. IEEE Transactions on Nuclear Science, 48(3 I), 440-443. https://doi.org/10.1109/23.940096

Radiation hardness of VA1 with submicron process technology. / Yokoyama, M.; Aihara, H.; Hazumi, M.; Ishino, Hirokazu; Kaneko, J.; Li, Y.; Marlow, D.; Mikkelsen, S.; Nygård, E.; Tajima, H.; Talebi, J.; Varner, G.; Yamamoto, H.

In: IEEE Transactions on Nuclear Science, Vol. 48, No. 3 I, 06.2001, p. 440-443.

Research output: Contribution to journalArticle

Yokoyama, M, Aihara, H, Hazumi, M, Ishino, H, Kaneko, J, Li, Y, Marlow, D, Mikkelsen, S, Nygård, E, Tajima, H, Talebi, J, Varner, G & Yamamoto, H 2001, 'Radiation hardness of VA1 with submicron process technology', IEEE Transactions on Nuclear Science, vol. 48, no. 3 I, pp. 440-443. https://doi.org/10.1109/23.940096
Yokoyama, M. ; Aihara, H. ; Hazumi, M. ; Ishino, Hirokazu ; Kaneko, J. ; Li, Y. ; Marlow, D. ; Mikkelsen, S. ; Nygård, E. ; Tajima, H. ; Talebi, J. ; Varner, G. ; Yamamoto, H. / Radiation hardness of VA1 with submicron process technology. In: IEEE Transactions on Nuclear Science. 2001 ; Vol. 48, No. 3 I. pp. 440-443.
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